塑料倒装芯片封装中含Cu和Ni UBM的无铅焊点的电迁移寿命统计

Seung-Hyun Chae, Xuefeng Zhang, H. Chao, K. Lu, P. Ho, Min Ding, P. Su, T. Uehling, L. Ramanathan
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引用次数: 22

摘要

采用温度和电流密度的函数进行了一系列电迁移试验,研究了含Cu或Ni的无铅钎料的寿命统计数据。基于电阻迹线整体形状,定义了保守失效时间准则,并与传统开路失效准则的结果进行了比较。基于开路失效准则,使用Cu UBM的焊点寿命比使用Ni UBM的焊点寿命长;然而,当应用保守准则时,与Ni UBM的寿命变得可比。在实验和有限元分析的基础上对焦耳热效应进行了解释。当电流通过1 A时,焊点温度比硅晶片表面温度高约15℃。对于含Cu UBM的钎料,最初在Cu6Sn5 /钎料界面处形成空洞,而最终在Cu3Sn/Cu6Sn5界面处出现开口失效。对于Ni UBM,最初在Ni3Sn4/钎料界面处形成的空洞导致Ni3Sn4/钎料界面失效
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electromigration lifetime statistics for Pb-free solder joints with Cu and Ni UBM in plastic flip-chip packages
A series of electromigration tests were performed as a function of temperature and current density to investigate lifetime statistics for Pb-free solder with Cu or Ni under-bump-metallization (UBM). Based on the overall shape of resistance traces, a conservative failure criterion for time-to-failure was defined and the results were compared with those based on the conventional open-failure criterion. Solder joints with Cu UBM had a longer lifetime than with Ni UBM, based on the open-failure criterion; however, the lifetime with Ni UBM became comparable when the conservative criterion was applied. The Joule heating effect was accounted for based on experiments and finite element analysis. The temperature of solder joints was determined to be approximately 15degC higher than that at the Si die surface when 1 A of current was passed. For solder with Cu UBM, voids formed initially at the Cu6Sn 5/solder interface while the final open failure occurred at the Cu3Sn/Cu6Sn5 interface. For Ni UBM, voids formed initially at the Ni3Sn4/solder interface leading to failure at the Ni3Sn4/solder interface
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