沟槽外延和多外延哪个更冷?超沟槽功率MOS-FET (STM)突破硅极限的前沿方法

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) Pub Date : 2000-05-22 DOI:10.1109/ISPSD.2000.856776

T. Minato, T. Nitta, A. Uenisi, M. Yano, M. Harada, S. Hine

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引用次数: 43

摘要

STM结构利用深沟槽技术和沟槽侧壁离子注入，使得在非常紧密的周期性p、n柱重复中利用新的RESURF效应突破Si极限成为可能。在从200到1000 V的宽击穿电压范围内，STM还以仅在DMOS制造晶圆工艺过程中增加一个掩膜步骤为代价，大大改善了电气特性。

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Which is cooler, trench or multi-epitaxy? Cutting edge approach for the silicon limit by the super trench power MOS-FET (STM)

STM structure makes it possible to break through the Si limit via new RESURF effect in very tight periodic p and n columns repetition by using deep trench technology and trench sidewall ion implantation. In a wide breakdown voltage range from 200 to 1000 V, STM also gives greatly improved electrical characteristics at the cost of only one extra mask step in the DMOS fabrication wafer process procedure.

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12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)

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