H. Yagi, T. Kikuchi, N. Inoue, R. Masuyama, T. Katsuyama, K. Uesaka, Y. Yoneda, H. Shoji
{"title":"高度可靠的基于inp的pin -光电二极管阵列单片集成90°混合MMI，采用对接再生","authors":"H. Yagi, T. Kikuchi, N. Inoue, R. Masuyama, T. Katsuyama, K. Uesaka, Y. Yoneda, H. Shoji","doi":"10.1109/ICIPRM.2014.6880574","DOIUrl":null,"url":null,"abstract":"Highly reliable InP-based pin-photodiode arrays monolithically integrated with a 90° hybrid consisting of MMI using the butt-joint regrowth were demonstrated for 100 Gb/s coherent receivers. Responsivity imbalance of all channels was less than ±0.5 dB owing to the phase adjustment of waveguides between MMIs. The wide 3-dB bandwidth of 26 GHz was obtained at a low bias voltage of -1.6 V. The dark current (bias: -3.0 V) was as low as 0.2 nA by optimizing the thickness of InP passivation, and the stable dark current was achieved in the accelerated aging test (-5 V at 175 °C) over 2,000 h.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Highly reliable InP-based PIN-photodiode array monolithically integrated with 90° hybrid MMI using butt-joint regrowth\",\"authors\":\"H. Yagi, T. Kikuchi, N. Inoue, R. Masuyama, T. Katsuyama, K. Uesaka, Y. Yoneda, H. Shoji\",\"doi\":\"10.1109/ICIPRM.2014.6880574\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Highly reliable InP-based pin-photodiode arrays monolithically integrated with a 90° hybrid consisting of MMI using the butt-joint regrowth were demonstrated for 100 Gb/s coherent receivers. Responsivity imbalance of all channels was less than ±0.5 dB owing to the phase adjustment of waveguides between MMIs. The wide 3-dB bandwidth of 26 GHz was obtained at a low bias voltage of -1.6 V. The dark current (bias: -3.0 V) was as low as 0.2 nA by optimizing the thickness of InP passivation, and the stable dark current was achieved in the accelerated aging test (-5 V at 175 °C) over 2,000 h.\",\"PeriodicalId\":181494,\"journal\":{\"name\":\"26th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-05-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"26th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2014.6880574\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2014.6880574","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Highly reliable InP-based PIN-photodiode array monolithically integrated with 90° hybrid MMI using butt-joint regrowth
Highly reliable InP-based pin-photodiode arrays monolithically integrated with a 90° hybrid consisting of MMI using the butt-joint regrowth were demonstrated for 100 Gb/s coherent receivers. Responsivity imbalance of all channels was less than ±0.5 dB owing to the phase adjustment of waveguides between MMIs. The wide 3-dB bandwidth of 26 GHz was obtained at a low bias voltage of -1.6 V. The dark current (bias: -3.0 V) was as low as 0.2 nA by optimizing the thickness of InP passivation, and the stable dark current was achieved in the accelerated aging test (-5 V at 175 °C) over 2,000 h.
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