SONOS存储器P/E循环过程中的捕获电荷分布

2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2006-07-03 DOI:10.1109/IPFA.2006.251003

H. Pang, L. Pan, Lei Sun, Dong Wu, Jun Zhu

{"title":"SONOS存储器P/E循环过程中的捕获电荷分布","authors":"H. Pang, L. Pan, Lei Sun, Dong Wu, Jun Zhu","doi":"10.1109/IPFA.2006.251003","DOIUrl":null,"url":null,"abstract":"Two phases during the P/E cycling of 0.18mum SONOS are observed using a combined charge pumping method to extract the trapped charge distribution: holes accumulation at the initial term, and electrons accumulation after long term cycling. Better endurance characteristic is obtained through optimization to P/E condition and process technology","PeriodicalId":283576,"journal":{"name":"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Trapped Charge Distribution during the P/E Cycling of SONOS Memory\",\"authors\":\"H. Pang, L. Pan, Lei Sun, Dong Wu, Jun Zhu\",\"doi\":\"10.1109/IPFA.2006.251003\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Two phases during the P/E cycling of 0.18mum SONOS are observed using a combined charge pumping method to extract the trapped charge distribution: holes accumulation at the initial term, and electrons accumulation after long term cycling. Better endurance characteristic is obtained through optimization to P/E condition and process technology\",\"PeriodicalId\":283576,\"journal\":{\"name\":\"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-07-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2006.251003\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2006.251003","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

利用联合电荷泵浦方法，观察了0.18 μ m SONOS循环P/E过程中的两个阶段:初始阶段的空穴积累和长期循环后的电子积累。通过对P/E条件和工艺技术的优化，获得了较好的耐久性能

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Trapped Charge Distribution during the P/E Cycling of SONOS Memory

Two phases during the P/E cycling of 0.18mum SONOS are observed using a combined charge pumping method to extract the trapped charge distribution: holes accumulation at the initial term, and electrons accumulation after long term cycling. Better endurance characteristic is obtained through optimization to P/E condition and process technology

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits

自引率

0.00%

发文量