垂直照明InAlAs雪崩光电二极管，适用于50 gbit /s应用

26th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2014-05-11 DOI:10.1109/ICIPRM.2014.6880573

M. Nada, Y. Muramoto, H. Yokoyama, T. Ishibashi, H. Matsuzaki

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引用次数: 3

摘要

我们实现了一种高性能的InAlAs雪崩光电二极管(APD)，适用于超过25 gbit /s的应用，例如50 gbit /s。与波导型结构相比，APD垂直照明结构的光学公差大，使得光学耦合容易。该APD的响应度为0.69 A/W, 3db带宽为30 GHz，倍增系数(M)为4.6，可实现50 gbit /s的高灵敏度工作。

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Vertical illumination InAlAs avalanche photodiode for 50-Gbit/s applications

We achieved a high-performance InAlAs avalanche photodiode (APD) for beyond 25-Gbit/s applications, such as 50-Gbit/s. The large optical tolerance of the APD's vertical-illumination structure makes optical coupling easy compared with waveguide-type structures. The fabricated APD exhibits responsivity of 0.69 A/W with a large 3-dB bandwidth of 30 GHz at a multiplication factor (M) of 4.6, which enables 50-Gbit/s highly sensitive operation.

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26th International Conference on Indium Phosphide and Related Materials (IPRM)

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