H. Busta, G. Gammie, S. Skala, J. Pogemiller, R. Nowicki, J. Hubacek, D. Devine, R. Rao, W. Urbanek
{"title":"用于大面积显示的火山状场发射器","authors":"H. Busta, G. Gammie, S. Skala, J. Pogemiller, R. Nowicki, J. Hubacek, D. Devine, R. Rao, W. Urbanek","doi":"10.1109/IEDM.1995.499225","DOIUrl":null,"url":null,"abstract":"Individual and groups of 3/spl times/3 and 10/spl times/10 gated volcano-shaped field emitters have been processed with gate dimensions of 4, 8, 14, 25 and 50 /spl mu/m and gate-to-emitter rim distances of 1.0 and 0.25 /spl mu/m. The 0.25 /spl mu/m devices are fabricated with a stepped oxide process which does not increase the gate-to-emitter capacitance significantly. Turn-on voltages range from 80-90 V for the 0.25 /spl mu/m devices and are about 250 V for the 1.0 /spl mu/m devices. I-V characteristics will be presented as well as an integration scheme for the formation of matrix-addressable arrays for field emitter display (FED) applications.","PeriodicalId":137564,"journal":{"name":"Proceedings of International Electron Devices Meeting","volume":"180 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Volcano-shaped field emitters for large area displays\",\"authors\":\"H. Busta, G. Gammie, S. Skala, J. Pogemiller, R. Nowicki, J. Hubacek, D. Devine, R. Rao, W. Urbanek\",\"doi\":\"10.1109/IEDM.1995.499225\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Individual and groups of 3/spl times/3 and 10/spl times/10 gated volcano-shaped field emitters have been processed with gate dimensions of 4, 8, 14, 25 and 50 /spl mu/m and gate-to-emitter rim distances of 1.0 and 0.25 /spl mu/m. The 0.25 /spl mu/m devices are fabricated with a stepped oxide process which does not increase the gate-to-emitter capacitance significantly. Turn-on voltages range from 80-90 V for the 0.25 /spl mu/m devices and are about 250 V for the 1.0 /spl mu/m devices. I-V characteristics will be presented as well as an integration scheme for the formation of matrix-addressable arrays for field emitter display (FED) applications.\",\"PeriodicalId\":137564,\"journal\":{\"name\":\"Proceedings of International Electron Devices Meeting\",\"volume\":\"180 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1995.499225\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1995.499225","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Volcano-shaped field emitters for large area displays
Individual and groups of 3/spl times/3 and 10/spl times/10 gated volcano-shaped field emitters have been processed with gate dimensions of 4, 8, 14, 25 and 50 /spl mu/m and gate-to-emitter rim distances of 1.0 and 0.25 /spl mu/m. The 0.25 /spl mu/m devices are fabricated with a stepped oxide process which does not increase the gate-to-emitter capacitance significantly. Turn-on voltages range from 80-90 V for the 0.25 /spl mu/m devices and are about 250 V for the 1.0 /spl mu/m devices. I-V characteristics will be presented as well as an integration scheme for the formation of matrix-addressable arrays for field emitter display (FED) applications.
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