金属化薄膜的腐蚀敏感性

A. J. Griffin, F. Brotzen, J. McPherson, C. Dunn
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引用次数: 1

摘要

应用阳极直流极化和交流电化学阻抗谱技术,更好地了解Al和Al- cu金属化薄膜的腐蚀过程。在部分氧化硅衬底上溅射的Al和Al- co金属化薄膜的氧化层电阻、氧化层/双层电容和阳极极化扫描与氧化层厚度、Cu分布和氧化层完整性有关。利用俄歇电子能谱定量分析氧化层厚度及其对阻抗谱响应的影响,利用扫描电子显微镜观察腐蚀侵蚀类型。讨论的结果与先前在块状Al-Co合金上得到的结果进行了比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Corrosion susceptibility of thin-film metallizations
Anodic DC polarization and AC electrochemical impedance-spectroscopy techniques were applied to obtain a better understanding of the corrosion process in Al and Al-Cu thin-film metallizations. The oxide-layer resistance, oxide-layer/double-layer capacitance, and anodic-polarization scans of Al and Al-Co thin-film metallizations which have been sputtered onto partially oxidized silicon substrates are correlated to oxide-layer thickness, Cu distribution, and oxide-layer integrity. Auger electron spectroscopy was employed to quantify oxide-layer thickness and its apparent influence on impedance-spectroscopy response, while scanning electron microscopy was used to observe the type of corrosion attack. The results discussed are compared with results previously obtained on bulk Al-Co alloys.<>
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