考虑流体/结构相互作用方法的半导体封装排气分析的空洞风险预测

Chih-Chung Hsu, Chao-Tsai Huang, R. Chang
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引用次数: 4

摘要

随着高密度封装技术的发展,如多模桩或封装堆叠技术,主要的模具工艺涉及质量问题,如模具下严重的空隙夹持。对通气的准确分析对于实际预测芯片封装过程中可能出现的空隙是非常重要的。本文对微芯片封装过程中流固耦合(FSI)通风分析的计算模型进行了前瞻性研究。排气分析是计算通过排气口的空气的压降,包括空气压力对流锋的影响。通过与FSI法相结合的方法,可以结合动网格变形技术,结合放空分析,对FSI行为进行精确预测。这与以往的研究不同,在排气分析中只有一种方法考虑固定几何形状。在此基础上,对试验数据进行了对比分析,研究了孔洞风险。结果表明,与传统的分析方法相比,所提出的建模方法能够获得更好的实验与仿真数据匹配。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Void risk prediction for semiconductor packages considering the air venting analysis with fluid/structure interaction method
According as high density packaging options such as multi-die staking or package stacking technologies are developed, the major mold process related quality concerns such as severe air void entrapment under the die. The accurate analysis of venting is important for realistic prediction of voids that may occur during chip encapsulation. This study reports a perspective investigation of computational modeling of air venting analysis with fluid-structure interaction (FSI) during microchip encapsulation process. The venting analysis is to calculate the pressure drop of the air that passes through the vent and include the effects of air pressure on the flow front. Through the integrated method with FSI method, we can predict precisely the FSI behavior with the dynamic mesh deformation technique simultaneously in accordance with venting analysis. This is different from previous study that only one way considered fixed geometry during venting analysis. Furthermore, a series of analyses are conducted to compare the experimental data to study the void risk. This result shows that the proposed modeling methodology is able to obtain better match of the experiment vs. simulation data than a traditional analysis.
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