一种改进开关性能的组合功率晶体管结构

Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 Pub Date : 1995-05-23 DOI:10.1109/ISPSD.1995.515050

Kang Baowei, Wu Yu

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引用次数: 2

摘要

将中心-轻掺杂发射极结构与中心-轻掺杂发射极结构相结合，研制出一种新型功率双极晶体管——中心-轻掺杂发射极相结合晶体管(CLDE-GAT)。实验结果表明，适当的组合结构可以将两种结构的优点结合起来，即GAT具有比传统晶体管更薄的基极宽度和更短的关断时间的高电压能力。在传统三扩散工艺的基础上，该结构晶体管的制作工艺简单，是一种低导通电压、低成本的高速高压开关器件。

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A combined power transistor structure for improved switching performances

A new power bipolar transistor, named Center-Lightly-Doped-Emitter Gate Associated Transistor (CLDE-GAT), has been developed which combines the base structure of the GAT with a center-lightly-doped emitter structure. The experimental results verify that a properly combined structure may results in combination of advantages of the two structures, i.e. high voltage capability with base width thinner than that of the conventional transistor for the GAT and shorter turn-off time for the latter. And because of the simple fabricating process based on the conventional triple-diffused process, it can be concluded that the new structure transistor is a high-speed high-voltage switching device with low on-voltage and low cost.

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Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95

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