VLSI和ULSI mosfet的自热研究

P.G. Mautry, J. Trager
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引用次数: 35

摘要

使用特殊的测试结构进行了mosfet内部和附近的温度测量。在恒定偏置下,相对于耗散功率归一化的温升被发现与L/sup -1/2/成正比,其中L表示通道长度。检测了温度分布的源漏不对称性。温度升高会导致沟道电导率的快速降低,对于短晶体管来说这一点尤为明显。数值模拟再现了测量到的mosfet内部的高速温升。它在短通道器件中得到增强,并导致对集成电路速度的低估。在实际设备中,建模延迟时间的错误可能会导致不同信号路径之间的抖动和倾斜。随着器件尺寸的进一步缩小和自热效应的增加,必须考虑到这一点,并最终通过使用冷晶体管的特性来纠正。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Investigation of self-heating in VLSI and ULSI MOSFETs
Temperature measurements both inside and near MOSFETs were taken using special test structures. At constant bias, the temperature rise normalized with respect to the dissipated power is found to be proportional to L/sup -1/2/, where L denotes the channel length. Source-drain asymmetries of the temperature distribution were detected. The temperature rise causes a fast reduction of channel conductivity, and is pronounced for short transistors. Numerical simulations reproduce the measured high speed of the temperature rise inside MOSFETs. It is enhanced for short-channel devices and leads to an underestimation of the speed of integrated circuits. In real devices, errors in modeling delay times may therefore arise causing jitter and skew between separate signal paths. As device dimensions further scale down and the self-heating effect increases, this must be considered and eventually corrected by using the characteristics of cold transistors.<>
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