采用无源基板容错技术提高多芯片模块良率

C. Peacock, H. Bolouri, C. Habiger
{"title":"采用无源基板容错技术提高多芯片模块良率","authors":"C. Peacock, H. Bolouri, C. Habiger","doi":"10.1109/ICISS.1996.552427","DOIUrl":null,"url":null,"abstract":"The widespread use of multichip module (MCM) technology is currently restricted by high substrate cost, poor substrate yield and low quality level of mounted components: the known good die (KGD) problem. This paper examines three yield enhancing fault tolerance techniques suitable for use with conventional (passive) substrates with the aid of a generic processor-memory MCM architecture. The use of spare memory dies and a paged address space is shown to be a very effective solution to the KGD problem for this particular architecture.","PeriodicalId":131620,"journal":{"name":"1996 Proceedings. Eighth Annual IEEE International Conference on Innovative Systems in Silicon","volume":"66 7","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Multichip module yield enhancement using passive substrate fault tolerance\",\"authors\":\"C. Peacock, H. Bolouri, C. Habiger\",\"doi\":\"10.1109/ICISS.1996.552427\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The widespread use of multichip module (MCM) technology is currently restricted by high substrate cost, poor substrate yield and low quality level of mounted components: the known good die (KGD) problem. This paper examines three yield enhancing fault tolerance techniques suitable for use with conventional (passive) substrates with the aid of a generic processor-memory MCM architecture. The use of spare memory dies and a paged address space is shown to be a very effective solution to the KGD problem for this particular architecture.\",\"PeriodicalId\":131620,\"journal\":{\"name\":\"1996 Proceedings. Eighth Annual IEEE International Conference on Innovative Systems in Silicon\",\"volume\":\"66 7\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-10-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 Proceedings. Eighth Annual IEEE International Conference on Innovative Systems in Silicon\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICISS.1996.552427\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 Proceedings. Eighth Annual IEEE International Conference on Innovative Systems in Silicon","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICISS.1996.552427","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

多芯片模块(MCM)技术的广泛应用目前受到高衬底成本,衬底成品率差和安装组件质量水平低的限制:已知的好模具(KGD)问题。本文在通用处理器-存储器MCM架构的帮助下,研究了适用于传统(被动)衬底的三种良率增强容错技术。对于这种特殊的体系结构,使用空闲内存和分页地址空间是解决KGD问题的一种非常有效的方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Multichip module yield enhancement using passive substrate fault tolerance
The widespread use of multichip module (MCM) technology is currently restricted by high substrate cost, poor substrate yield and low quality level of mounted components: the known good die (KGD) problem. This paper examines three yield enhancing fault tolerance techniques suitable for use with conventional (passive) substrates with the aid of a generic processor-memory MCM architecture. The use of spare memory dies and a paged address space is shown to be a very effective solution to the KGD problem for this particular architecture.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信