在晶圆级芯片级封装中用于射频隔离的穿过基板沟槽

S. Sinaga, A. Polyakov, M. Bartek, J. Burghartz
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引用次数: 5

摘要

晶圆级芯片级封装(WLCSP)概念提供了许多新的可能性。不仅是封装尺寸更小,而且性能的提高也可以很容易地实现。众所周知,射频集成电路(RFIC)由于其导电衬底而受到衬底耦合的影响。RFIC的缩小和工作频率的增加使衬底耦合更加成问题。本文提出了通过衬底沟槽来抑制衬底耦合的方案。利用WLCSP概念可以很容易地实现穿基板沟槽,并且在机械可靠性方面没有任何缺点。本文还介绍了等效电路建模方法的拓扑结构。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Through-substrate trenches for RF isolation in wafer-level chip-scale package
The wafer-level chip-scale packaging (WLCSP) concept offers a lot of new possibilities. Not only is the package size smaller, but also features to improve the performance can be easily realized. It is widely known that the radio frequency integrated circuit (RFIC) suffers from substrate coupling due to its electrically conducting substrate. The downscaling of RFIC and the increasing operating frequency make the substrate coupling even more problematic. This paper proposes through-substrate trench as schemes to suppress the substrate coupling. A through-substrate trench can easily be realized using WLCSP concept without any drawback in mechanical reliability. Topologies for equivalent circuit modeling approach are also introduced in this work.
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