采用SOI结构和多晶硅基互连技术的高纵横比单晶硅微结构电容式加速度计

Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308) Pub Date : 2000-01-23 DOI:10.1109/MEMSYS.2000.838570

T. Yamamoto, N. Kato, M. Matsui, Y. Takeuchi, Y. Otsuka, S. Akita

{"title":"采用SOI结构和多晶硅基互连技术的高纵横比单晶硅微结构电容式加速度计","authors":"T. Yamamoto, N. Kato, M. Matsui, Y. Takeuchi, Y. Otsuka, S. Akita","doi":"10.1109/MEMSYS.2000.838570","DOIUrl":null,"url":null,"abstract":"We have developed a new processing technique for a capacitive mechanical sensor with a single crystalline silicon microstructure using the SOI structure which enables electrical isolation and interconnected wiring. This technique can make the sensor surface completely flat, allowing the formation of a cap for resin molding and a vacuum package for an angular rate sensor.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Capacitive accelerometer with high aspect ratio single crystalline silicon microstructure using the SOI structure with polysilicon-based interconnect technique\",\"authors\":\"T. Yamamoto, N. Kato, M. Matsui, Y. Takeuchi, Y. Otsuka, S. Akita\",\"doi\":\"10.1109/MEMSYS.2000.838570\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have developed a new processing technique for a capacitive mechanical sensor with a single crystalline silicon microstructure using the SOI structure which enables electrical isolation and interconnected wiring. This technique can make the sensor surface completely flat, allowing the formation of a cap for resin molding and a vacuum package for an angular rate sensor.\",\"PeriodicalId\":251857,\"journal\":{\"name\":\"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)\",\"volume\":\"50 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-01-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MEMSYS.2000.838570\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MEMSYS.2000.838570","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 8

摘要

我们开发了一种新的处理技术，用于具有单晶硅微结构的电容式机械传感器，该传感器使用SOI结构，可以实现电气隔离和互连布线。这种技术可以使传感器表面完全平坦，允许形成树脂成型帽和角速率传感器的真空封装。

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Capacitive accelerometer with high aspect ratio single crystalline silicon microstructure using the SOI structure with polysilicon-based interconnect technique

We have developed a new processing technique for a capacitive mechanical sensor with a single crystalline silicon microstructure using the SOI structure which enables electrical isolation and interconnected wiring. This technique can make the sensor surface completely flat, allowing the formation of a cap for resin molding and a vacuum package for an angular rate sensor.

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Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)

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