用于MEMS的体钨电感耦合等离子体刻蚀

2014 IEEE 27th International Conference on Micro Electro Mechanical Systems (MEMS) Pub Date : 2022-10-01 DOI:10.1109/MEMSYS.2014.6765687

Lu Song, Nannan Li, Shibin Zhang, Jin Luo, Jia Hu, Yiming Zhang, Shuhui Chen, J. Chen

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引用次数: 8

摘要

钨基MEMS器件有潜力用于许多应用，例如用于微电火花加工和超声波加工的工具，或用于注塑成型的模具。首次开发了体钨电感耦合等离子体(ICP)刻蚀技术，并对其进行了表征，该刻蚀技术能够制备出特征尺寸小于3μm的高纵横比(>13)结构。在高达2.2μm/min的刻蚀速率下实现了230μm的刻蚀深度。这项技术为MEMS应用提供了巨大的机会。

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Inductively coupled plasma etching of bulk tungsten for MEMS applications

Tungsten based MEMS devices have the potential to be used for many applications, such as tools for micro electrical discharge machining and ultrasonic machining, or mold for inject molding. For the first time, bulk tungsten inductively coupled plasma (ICP) etching was developed and characterized, which is capable of producing high aspect ratio (>13) structures with feature size below 3μm. Etching depth of 230μm has been achieved at an etch rate up to 2.2μm/min. This technology offers big opportunities for MEMS applications.

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来源期刊

2014 IEEE 27th International Conference on Micro Electro Mechanical Systems (MEMS)

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