{"title":"Si/SiGe高速场效应晶体管","authors":"K. Ismail","doi":"10.1109/IEDM.1995.499249","DOIUrl":null,"url":null,"abstract":"We review the current status of Si/SiGe n- and p-type MODFETs with an emphasis on their microwave performance. A comparison with state-of-the-art Si technology is given, and the potential use of Si/SiGe devices in complementary logic is pointed out.","PeriodicalId":137564,"journal":{"name":"Proceedings of International Electron Devices Meeting","volume":"120 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"44","resultStr":"{\"title\":\"Si/SiGe high-speed field-effect transistors\",\"authors\":\"K. Ismail\",\"doi\":\"10.1109/IEDM.1995.499249\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We review the current status of Si/SiGe n- and p-type MODFETs with an emphasis on their microwave performance. A comparison with state-of-the-art Si technology is given, and the potential use of Si/SiGe devices in complementary logic is pointed out.\",\"PeriodicalId\":137564,\"journal\":{\"name\":\"Proceedings of International Electron Devices Meeting\",\"volume\":\"120 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"44\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1995.499249\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1995.499249","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We review the current status of Si/SiGe n- and p-type MODFETs with an emphasis on their microwave performance. A comparison with state-of-the-art Si technology is given, and the potential use of Si/SiGe devices in complementary logic is pointed out.
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