原子晶体管芯片的制备与工艺表征

TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference Pub Date : 2009-06-21 DOI:10.1109/SENSOR.2009.5285870

Ho-Chiao Chuang, Evan A. Salim, V. Vuletić, Dana Z. Anderson, Victor M. Bright

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引用次数: 0

摘要

本文介绍了一种用于原子隧穿实验的原子芯片的设计与制作。开发了一种制造工艺，该工艺使用uv光学和电子束光刻相结合，在单个芯片上对微米和纳米尺度的铜线进行图案设计。在这项工作中制造的最小线宽为200nm。导线的电流密度可以超过7.5×107 A/cm2。电流实验证明了在芯片上实现原子隧穿实验的可行性。

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Fabrication and process characterization of atom transistor chips

This paper describes the design and fabrication of an atom chip for atom tunneling experiments. A fabrication process was developed that uses a combination of UV-optical and Electron-Beam lithography to pattern micrometer and nanometer scale copper wires on a single chip. The minimum wire width fabricated in this work is 200nm. The wires can carry current densities of more than 7.5×107 A/cm2. The electrical current tests establish the feasibility of realizing chip-based atom tunneling experiments.

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TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference

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