{"title":"垂直功率场效应管中精确电流传感的建模和测试结构","authors":"M. Chu, T. Harjono, K. Joardar, V. Krishnamurthy","doi":"10.1109/ICMTS.2019.8730949","DOIUrl":null,"url":null,"abstract":"A new approach using a combination of analytical models, Spice simulations, and test structures is reported that allows for a comprehensive treatment of 3-dimensional (3D) distributed effects in vertical power FETs. This method leads to higher accuracy in current sensing as well as more cost effective design cycles.","PeriodicalId":333915,"journal":{"name":"2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS)","volume":"236 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Modeling and Test Structures for Accurate Current Sensing in Vertical Power FETs\",\"authors\":\"M. Chu, T. Harjono, K. Joardar, V. Krishnamurthy\",\"doi\":\"10.1109/ICMTS.2019.8730949\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new approach using a combination of analytical models, Spice simulations, and test structures is reported that allows for a comprehensive treatment of 3-dimensional (3D) distributed effects in vertical power FETs. This method leads to higher accuracy in current sensing as well as more cost effective design cycles.\",\"PeriodicalId\":333915,\"journal\":{\"name\":\"2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS)\",\"volume\":\"236 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.2019.8730949\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.2019.8730949","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Modeling and Test Structures for Accurate Current Sensing in Vertical Power FETs
A new approach using a combination of analytical models, Spice simulations, and test structures is reported that allows for a comprehensive treatment of 3-dimensional (3D) distributed effects in vertical power FETs. This method leads to higher accuracy in current sensing as well as more cost effective design cycles.