含氢硼碳氮化膜用于2nm节点低k互连

2009 International Symposium on VLSI Technology, Systems, and Applications Pub Date : 2009-04-27 DOI:10.1109/VTSA.2009.5159270

H. Aoki, T. Masuzumi, M. Hara, D. Watanabe, C. Kimura, T. Sugino

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引用次数: 2

摘要

研究了三(二甲氨基)硼(TMAB)气沉积含氢硼碳氮(BCNH)薄膜的性能。在低RP功率(10W)下沉积，BCNH薄膜的介电常数(k)低至1.8。该薄膜具有足够的杨氏模量高达26 GPa。此外，BCNH膜的k值比常规BCN膜更稳定。

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Boron carbon nitride film containing hydrogen for 2nm node low-k interconnection

We have investigated the properties of boron carbon nitride containing hydrogen (BCNH) film deposited by using tris (dimethylamino)boron (TMAB) gas. The dielectric constant (k) of the BCNH film was achieved as low as 1.8 by deposition with a low RP power (10W). The film has a sufficient Young's modulus as high as 26 GPa. In addition, k-value of BCNH film is more stable compared with conventional BCN film.

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2009 International Symposium on VLSI Technology, Systems, and Applications

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