建立375W有源光学外接PCI-e中心加速卡散热限制的最佳工程实践

G. Refai-Ahmed, Brian Philofsky, V. Gektin, B. Sammakia, Hoa Do, S. Rangarajan
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引用次数: 2

摘要

有许多广泛使用的传热技术,使用强制空气和蒸汽室来解决高达40瓦/平方厘米的热问题。图1中的图表概述了当今的冷却技术、市场和设备总功率(单位为瓦),同时介绍了空气冷却与液体冷却的热流密度限制(单位为W/cm2)。基于计算流体动力学(CFD)模型,研究了一种带有有源光模块的375 W风冷PCI-e卡在不同气流速率下的特性。该数值模型将FPGA芯片的热性能与戴尔R740机箱的测试数据相关联。利用Ansys IcePak V19.1软件[1],进行了一系列CFD模拟,确定了一定气流速率下的温度场和流场。为了验证计算模型的结果,利用美国空气运动与控制协会(AMCA)标准风洞进行了不同流速下的气流和压降数值实验。确定PCI-e卡测试数据与数值模型相关,并且可以通过在散热器的基础上包括Refai-Ahmed等[2]专利中详述的纹理表面来扩展现有风冷散热器的局限性。因此,硅芯片与织构表面之间的热界面材料TIM1.5可以表示为70微米厚度,有效导热系数为20 W/m-K,具有更高的综合性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Best Engineering Practices to Establish Cooling Limit for 375W Add-in PCI-e Center Accelerator Card with Active Optical
There are many widely available heat transfer technologies that use forced air and vapor chambers to solve thermal problems up to 40 Watts/cm2. The chart in Figure 1 provides an overview of today's cooling technologies, markets, and total device power in Watts while introducing heat flux limits in W/cm2 for air cooling versus liquid cooling. The present study investigates the characterization of an air-cooled 375 W add-in PCI-e Card with active optical modules based on a computational fluid dynamics (CFD) model at different airflow rates. The numerical model correlates the thermal performance of a FPGA chip with test data from a Dell R740 chassis. Using Ansys IcePak V19.1 software [1], a series of CFD simulations has been performed to determine the temperature and flow fields over a range of airflow rates. In order to validate the computational model findings, experiments were conducted to obtain the airflow and pressure drop values at different flow rates using an Air Movement and Control Association (AMCA) standard wind tunnel. It was determined that the PCI-e card test data correlated with the numerical model and that the limitations of existing air-cooled heatsinks can be extended by including a textured surface as detailed in a patent by Refai-Ahmed et al. [2] on the base of the heatsink. Hence, the thermal interface material (TIM1.5) between the silicon chip and the textured surface can be represented at 70 microns thickness with an effective thermal conductivity of 20 W/m-K which has a higher overall performance.
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