{"title":"红外探测器用PbS量子点/ ZnO纳米线混合测试结构","authors":"Haibin Wang, A. Higo, Y. Mita, T. Kubo, H. Segawa","doi":"10.1109/ICMTS.2019.8730956","DOIUrl":null,"url":null,"abstract":"Aiming at developing infrared optoelectronic devices compatible with silicon-based large scale integration, we investigated performance of PbS colloidal quantum dot-silicon photodetectors using several different test structures. Silicon-based IR photo detector structures composed of PbS quantum dot / ZnO nanowire were investigated.","PeriodicalId":333915,"journal":{"name":"2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"PbS Quantum Dot / ZnO Nanowires Hybrid Test Structures for Infrared Photodetector\",\"authors\":\"Haibin Wang, A. Higo, Y. Mita, T. Kubo, H. Segawa\",\"doi\":\"10.1109/ICMTS.2019.8730956\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Aiming at developing infrared optoelectronic devices compatible with silicon-based large scale integration, we investigated performance of PbS colloidal quantum dot-silicon photodetectors using several different test structures. Silicon-based IR photo detector structures composed of PbS quantum dot / ZnO nanowire were investigated.\",\"PeriodicalId\":333915,\"journal\":{\"name\":\"2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS)\",\"volume\":\"103 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.2019.8730956\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.2019.8730956","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
PbS Quantum Dot / ZnO Nanowires Hybrid Test Structures for Infrared Photodetector
Aiming at developing infrared optoelectronic devices compatible with silicon-based large scale integration, we investigated performance of PbS colloidal quantum dot-silicon photodetectors using several different test structures. Silicon-based IR photo detector structures composed of PbS quantum dot / ZnO nanowire were investigated.