GeOx界面层中Ge氧化态对Ge pmosfet电学特性的影响

2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2018-04-01 DOI:10.1109/VLSI-TSA.2018.8403823

S. Yi, K. Chang-Liao, Chia-Wei Hsu, Jiayi Huang, Tzung-Yu Wu

{"title":"GeOx界面层中Ge氧化态对Ge pmosfet电学特性的影响","authors":"S. Yi, K. Chang-Liao, Chia-Wei Hsu, Jiayi Huang, Tzung-Yu Wu","doi":"10.1109/VLSI-TSA.2018.8403823","DOIUrl":null,"url":null,"abstract":"Effects of Ge oxidation states in GeO<inf>x</inf> interfacial layer (IL) on electrical characteristics of Ge pMOSFET with ~ 0.5 nm EOT are comprehensively studied. The gate leakage current density (J<inf>G</inf>) is impacted by contents of Ge+1 and Ge+2 in GeO<inf>x</inf> IL. The hole mobility is influenced by content of Ge+3 in GeO<inf>x</inf> IL. The Ge oxidation states in IL play crucial roles on Ge pMOSFET.","PeriodicalId":209993,"journal":{"name":"2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)","volume":"190 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Impact of Ge oxidation states in GeOx interfacial layer on electrical characteristics of Ge pMOSFETs\",\"authors\":\"S. Yi, K. Chang-Liao, Chia-Wei Hsu, Jiayi Huang, Tzung-Yu Wu\",\"doi\":\"10.1109/VLSI-TSA.2018.8403823\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Effects of Ge oxidation states in GeO<inf>x</inf> interfacial layer (IL) on electrical characteristics of Ge pMOSFET with ~ 0.5 nm EOT are comprehensively studied. The gate leakage current density (J<inf>G</inf>) is impacted by contents of Ge+1 and Ge+2 in GeO<inf>x</inf> IL. The hole mobility is influenced by content of Ge+3 in GeO<inf>x</inf> IL. The Ge oxidation states in IL play crucial roles on Ge pMOSFET.\",\"PeriodicalId\":209993,\"journal\":{\"name\":\"2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)\",\"volume\":\"190 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSI-TSA.2018.8403823\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSI-TSA.2018.8403823","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

全面研究了GeOx界面层(IL)中Ge氧化态对~ 0.5 nm EOT的Ge pMOSFET电特性的影响。gex IL中Ge+1和Ge+2的含量影响栅极漏电流密度(JG)， gex IL中Ge+3的含量影响空穴迁移率，gex IL中Ge氧化态对Ge pMOSFET起着至关重要的作用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Impact of Ge oxidation states in GeOx interfacial layer on electrical characteristics of Ge pMOSFETs

Effects of Ge oxidation states in GeOx interfacial layer (IL) on electrical characteristics of Ge pMOSFET with ~ 0.5 nm EOT are comprehensively studied. The gate leakage current density (JG) is impacted by contents of Ge⁺¹ and Ge⁺² in GeOx IL. The hole mobility is influenced by content of Ge⁺³ in GeOx IL. The Ge oxidation states in IL play crucial roles on Ge pMOSFET.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

自引率

0.00%

发文量