in - ga - zn - o薄膜突触在神经网络中的应用

2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2018-06-01 DOI:10.1109/IMFEDK.2018.8581971

Yuki Shibayama, D. Yamakawa, M. Kimura, Y. Nakashima

{"title":"in - ga - zn - o薄膜突触在神经网络中的应用","authors":"Yuki Shibayama, D. Yamakawa, M. Kimura, Y. Nakashima","doi":"10.1109/IMFEDK.2018.8581971","DOIUrl":null,"url":null,"abstract":"We fabricated In-Ga-Zn-O (IGZO) thin film synapses for neural networks using an LSI. The current flowing in the IGZO thin film degraded gradually. It shows a sufficient degradation in electrical characteristics, and it can be used for the modified Hebbian learning rule proposed by the authors.","PeriodicalId":434417,"journal":{"name":"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"In-Ga-Zn-O Thin Film Synapse in Neural Network Using LSI\",\"authors\":\"Yuki Shibayama, D. Yamakawa, M. Kimura, Y. Nakashima\",\"doi\":\"10.1109/IMFEDK.2018.8581971\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We fabricated In-Ga-Zn-O (IGZO) thin film synapses for neural networks using an LSI. The current flowing in the IGZO thin film degraded gradually. It shows a sufficient degradation in electrical characteristics, and it can be used for the modified Hebbian learning rule proposed by the authors.\",\"PeriodicalId\":434417,\"journal\":{\"name\":\"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMFEDK.2018.8581971\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2018.8581971","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

我们利用大规模集成电路制作了In-Ga-Zn-O (IGZO)薄膜神经网络突触。IGZO薄膜中的电流逐渐衰减。它在电特性上有充分的退化，可以用于作者提出的改进的Hebbian学习规则。

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In-Ga-Zn-O Thin Film Synapse in Neural Network Using LSI

We fabricated In-Ga-Zn-O (IGZO) thin film synapses for neural networks using an LSI. The current flowing in the IGZO thin film degraded gradually. It shows a sufficient degradation in electrical characteristics, and it can be used for the modified Hebbian learning rule proposed by the authors.

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来源期刊

2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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