eWLB封装用SnAgCu互连的电迁移降解机理分析

2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI:10.1109/IRPS.2012.6241792

T. Frank, C. Chappaz, L. Arnaud, X. Federspiel, F. Colella, E. Petitprez, L. Anghel

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引用次数: 3

摘要

本文主要研究Fanout嵌入式晶圆级球栅阵列(FO-eWLB)技术中SnAgCu互连的电迁移问题。通过基于阻力斜率模型和失效准则(FC)的方法，分析了退化阶段的布莱克参数。

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Electromigration degradation mechanism analysis of SnAgCu interconnects for eWLB package

This paper focuses on electromigration of SnAgCu interconnects of Fanout embedded Wafer Level Ball Grid Array (FO-eWLB) technology. Black's parameters are analyzed regarding stage of degradation through approaches based on resistance slope modeling and on Failure Criterion (FC).

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2012 IEEE International Reliability Physics Symposium (IRPS)

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