改性SOI衬底上的高压增强/耗尽模式AlGaN/GaN hemt

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Pub Date : 2013-05-26 DOI:10.1109/ISPSD.2013.6694431

Q. Jiang, Cheng Liu, Yunyou Lu, K. J. Chen

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引用次数: 3

摘要

展示了在GaN-on- soi平台上制备的高压AlGaN/GaN hemt。GaN-on-SOI晶圆采用MOCVD在由p型(111)Si器件层、SiO2埋埋氧化物和p型(100)Si手柄衬底组成的改性SOI晶圆上生长iii -氮化物外延层。耗尽型和增强型hemt是整体集成的。采用氟等离子体注入技术获得的增强模式hemt具有大的ON/OFF电流比(107)、大的击穿电压(浮衬底时为1354 V)和低的导通电阻(3.9 mΩ·cm2)。此外，通过简单的热阻模型估计了埋地氧化物对散热的影响。

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High-voltage enhancement/Depletion-mode AlGaN/GaN HEMTs on modified SOI substrates

High-voltage AlGaN/GaN HEMTs fabricated on a GaN-on-SOI platform were demonstrated. The GaN-on-SOI wafer features III-nitride epi-layers grown by MOCVD on a modified SOI wafer consisting of a p-type (111) Si device layer, a SiO2 buried oxide and a p-type (100) Si handle substrate. Depletion- and enhancementmode HEMTs are monolithically integrated. The Enhancement-mode HEMTs obtained by fluorine plasma implantation technique deliver large ON/OFF current ratio (107), large breakdown voltage (1354 V with floating substrate) and low ON-resistance (3.9 mΩ·cm2). In addition, the impact of the buried oxide on thermal dissipation is estimated by a simple thermal resistance model.

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来源期刊

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

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