{"title":"先进技术节点自顶向下分层技术改进","authors":"T. Hrncír, H. H. Yap, E. Moyal, J. Teshima","doi":"10.1109/IPFA.2016.7564253","DOIUrl":null,"url":null,"abstract":"An improved method of a planar IC sample delayering by FIB is proposed. The sample cleaving and FIB milling from two directions increases the quality of the delayered area. SEM allows accurate endpointing of the delayering on the layer of interest. The method allows to increase the delayered sample area significantly.","PeriodicalId":206237,"journal":{"name":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Improvement of top-down delayering techniques on advanced technology nodes\",\"authors\":\"T. Hrncír, H. H. Yap, E. Moyal, J. Teshima\",\"doi\":\"10.1109/IPFA.2016.7564253\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An improved method of a planar IC sample delayering by FIB is proposed. The sample cleaving and FIB milling from two directions increases the quality of the delayered area. SEM allows accurate endpointing of the delayering on the layer of interest. The method allows to increase the delayered sample area significantly.\",\"PeriodicalId\":206237,\"journal\":{\"name\":\"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"51 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-07-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2016.7564253\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2016.7564253","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Improvement of top-down delayering techniques on advanced technology nodes
An improved method of a planar IC sample delayering by FIB is proposed. The sample cleaving and FIB milling from two directions increases the quality of the delayered area. SEM allows accurate endpointing of the delayering on the layer of interest. The method allows to increase the delayered sample area significantly.