顶发射AMOLED的垂直串扰分析

2020 21st International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2020-08-01 DOI:10.1109/ICEPT50128.2020.9201921

Zhibin Han, Jianxin Liu, Gary Chaw, Shengdong Zhang

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引用次数: 0

摘要

在Top Emission AMOLED像素中，数据线会与阳极层重叠，导致较大的寄生电容Cpd(日期线与像素阳极之间的电容)。因此，我们对数据线引起的串扰进行了电仿真分析。与LCD不同的是，寄生电容不会引起明显的串扰，而垂直串扰主要是由TFT泄漏引起的，通过调整像素存储电容可以改善TFT泄漏的效果。

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The Analysis of Vertical Cross Talk on Top Emission AMOLED

In Top Emission AMOLED pixel, data line will overlap with anode layer, resulting in large parasitic capacitance Cpd (Capacitance between dateline and pixel anode). Therefore, we conduct electrical simulation analysis on cross-talk caused by dataline. Unlike LCD, The parasitic capacitance did not cause obvious cross-talk, while vertical cross-talk was mainly caused by the leakage of TFT, and the effect of TFT leakage could be improved by adjusting pixel storage capacitance.

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2020 21st International Conference on Electronic Packaging Technology (ICEPT)

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