优化用于无箝位电感开关(UIS)的600 V穿孔式IGBT

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) Pub Date : 2000-05-22 DOI:10.1109/ISPSD.2000.856844

J. Yedinak, B. Wood, P. Shenoy, G. Dolny, D. Lange, T. Morthorst

{"title":"优化用于无箝位电感开关(UIS)的600 V穿孔式IGBT","authors":"J. Yedinak, B. Wood, P. Shenoy, G. Dolny, D. Lange, T. Morthorst","doi":"10.1109/ISPSD.2000.856844","DOIUrl":null,"url":null,"abstract":"In this paper, we analyze the UIS capability of punchthrough (PT) IGBTs both experimentally, and through non-isothermal two-dimensional numerical simulations. It is shown that the UIS failure mechanism is determined by the open-base p-n-p structure inherent in the IGBT. By optimizing the open base p-n-p, avalanche induced second breakdown can be prevented at current densities in excess of 1000 A/cm/sup 2/. A 600 V PT-IGBT with low on-state voltage, fast switching, and >4.5 J/cm/sup 2/ UIS capability at 120 A/cm/sup 2/ is experimentally demonstrated.","PeriodicalId":260241,"journal":{"name":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Optimizing 600 V punchthrough IGBT's for unclamped inductive switching (UIS)\",\"authors\":\"J. Yedinak, B. Wood, P. Shenoy, G. Dolny, D. Lange, T. Morthorst\",\"doi\":\"10.1109/ISPSD.2000.856844\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we analyze the UIS capability of punchthrough (PT) IGBTs both experimentally, and through non-isothermal two-dimensional numerical simulations. It is shown that the UIS failure mechanism is determined by the open-base p-n-p structure inherent in the IGBT. By optimizing the open base p-n-p, avalanche induced second breakdown can be prevented at current densities in excess of 1000 A/cm/sup 2/. A 600 V PT-IGBT with low on-state voltage, fast switching, and >4.5 J/cm/sup 2/ UIS capability at 120 A/cm/sup 2/ is experimentally demonstrated.\",\"PeriodicalId\":260241,\"journal\":{\"name\":\"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-05-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2000.856844\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2000.856844","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 8

摘要

本文通过实验和非等温二维数值模拟两种方法分析了冲穿型igbt的UIS性能。结果表明，UIS的失效机制是由IGBT固有的开基p-n-p结构决定的。通过优化开放基极p-n-p，可以在电流密度超过1000 A/cm/sup /时防止雪崩引起的二次击穿。实验证明了600 V PT-IGBT具有低导通电压，快速开关和>4.5 J/cm/sup 2/ UIS的120 A/cm/sup 2/能力。

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Optimizing 600 V punchthrough IGBT's for unclamped inductive switching (UIS)

In this paper, we analyze the UIS capability of punchthrough (PT) IGBTs both experimentally, and through non-isothermal two-dimensional numerical simulations. It is shown that the UIS failure mechanism is determined by the open-base p-n-p structure inherent in the IGBT. By optimizing the open base p-n-p, avalanche induced second breakdown can be prevented at current densities in excess of 1000 A/cm/sup 2/. A 600 V PT-IGBT with low on-state voltage, fast switching, and >4.5 J/cm/sup 2/ UIS capability at 120 A/cm/sup 2/ is experimentally demonstrated.

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12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)

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