氮化镓肖特基二极管阱辅助应力诱导ESD可靠性研究

2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) Pub Date : 2018-09-01 DOI:10.23919/EOS/ESD.2018.8509745

B. Shankar, Rahul Singh, R. Sengupta, H. Khand, Ankit Soni, Sayak Dutta Gupta, S. Raghavan, H. Gossner, M. Shrivastava

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引用次数: 7

摘要

研究了嵌入式GaN肖特基二极管在正向和反向ESD应力下的电热行为和退化。研究了肖特基界面不同表面处理对陷阱产生和降解的影响。利用动态拉曼光谱研究了机械应力和缺陷的演变过程。在每种情况下都发现了不同的失效模式。

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Trap Assisted Stress Induced ESD Reliability of GaN Schottky Diodes

Electro-thermal behaviour and degradation of recessed GaN Schottky diode are studied under forward and reverse ESD stress. Impact of different surface treatments at Schottky interface, on trap generation and degradation is investigated. Evolution of mechanical stress and defects is probed using onthe-fly Raman spectroscopy. Distinct failure modes are discovered in each case.

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2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)

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