HEMT短门噪声建模及NF性能极限参数分析

1992 International Technical Digest on Electron Devices Meeting Pub Date : 1900-01-01 DOI:10.1109/IEDM.1992.307429

F. Bonani, G. Ghione, C. Naldi, R. D. Schnell, H. Siweris

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引用次数: 3

摘要

本文基于Ando和Itoh方法的改进版本，描述了AlGaAs-GaAs hemt的解析性、面向cad的准二维噪声模型(参见IEEE Trans)。电子器件，vol. ED-37, no。1，第67-78页，1990年)。通过与在标准0.5 μ m (HEMT30)和先进0.25 μ m (HEMT40)西门子hemt上进行的直流、交流和噪声测量进行比较，验证了该模型。在SIEMENS HEMT结构的基础上，进行了缩放研究，以推断该技术在0.5-0.1 μ m范围内减少栅极长度的性能极限。将模型扩展到伪晶和双通道HEMT正在进行中。

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HEMT short-gate noise modelling and parametric analysis of NF performance limits

The paper describes an analytical, CAD-oriented quasi-2D noise model for AlGaAs-GaAs HEMTs, based on an improved version of the Ando and Itoh approach (see IEEE Trans. on Electron Devices, vol. ED-37, no. 1, p. 67-78, 1990). The model was validated through comparison with DC, AC and noise measurements carried out on both standard 0.5 mu m (HEMT30) and advanced 0.25 mu m (HEMT40) SIEMENS HEMTs. On the basis of the SIEMENS HEMT structure, a scaling study was performed to extrapolate the performance limits of this technology with decreasing gate length in the range 0.5-0.1 mu m. The extension of the model to pseudomorphic and double-channel HEMT's is in progress.<>

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来源期刊

1992 International Technical Digest on Electron Devices Meeting

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