毫米波sige异质结晶体管几何可伸缩模型参数提取

2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2013-09-01 DOI:10.1109/BCTM.2013.6798160

A. Pawlak, M. Schroter, A. Fox

{"title":"毫米波sige异质结晶体管几何可伸缩模型参数提取","authors":"A. Pawlak, M. Schroter, A. Fox","doi":"10.1109/BCTM.2013.6798160","DOIUrl":null,"url":null,"abstract":"The observation of negative perimeter collector current in advanced SiGe HBT technologies is explained and a general geometry scaling approach is proposed. Application to mm-wave SiGe-HBTs shows excellent results of HICUM/L2 v2.31 for a wide range of emitter dimensions. Non-monotonic variation of peak fT with emitter dimensions demonstrates the relevance of a geometry scalable compact model for circuit optimization.","PeriodicalId":272941,"journal":{"name":"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Geometry scalable model parameter extraction for mm-wave SiGe-heterojunction transistors\",\"authors\":\"A. Pawlak, M. Schroter, A. Fox\",\"doi\":\"10.1109/BCTM.2013.6798160\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The observation of negative perimeter collector current in advanced SiGe HBT technologies is explained and a general geometry scaling approach is proposed. Application to mm-wave SiGe-HBTs shows excellent results of HICUM/L2 v2.31 for a wide range of emitter dimensions. Non-monotonic variation of peak fT with emitter dimensions demonstrates the relevance of a geometry scalable compact model for circuit optimization.\",\"PeriodicalId\":272941,\"journal\":{\"name\":\"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BCTM.2013.6798160\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCTM.2013.6798160","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 9

摘要

解释了先进SiGe HBT技术中负周长集电极电流的观察，并提出了一种通用的几何缩放方法。在毫米波SiGe-HBTs上的应用表明，HICUM/L2 v2.31在广泛的发射体尺寸范围内取得了优异的效果。峰值傅立叶变换随发射极尺寸的非单调变化证明了几何可伸缩紧凑模型与电路优化的相关性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Geometry scalable model parameter extraction for mm-wave SiGe-heterojunction transistors

The observation of negative perimeter collector current in advanced SiGe HBT technologies is explained and a general geometry scaling approach is proposed. Application to mm-wave SiGe-HBTs shows excellent results of HICUM/L2 v2.31 for a wide range of emitter dimensions. Non-monotonic variation of peak fT with emitter dimensions demonstrates the relevance of a geometry scalable compact model for circuit optimization.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

自引率

0.00%

发文量