高缺陷密度的记忆修复

2015 IEEE 33rd VLSI Test Symposium (VTS) Pub Date : 2015-04-27 DOI:10.1109/VTS.2015.7116277

M. Nicolaidis, P. Papavramidou

{"title":"高缺陷密度的记忆修复","authors":"M. Nicolaidis, P. Papavramidou","doi":"10.1109/VTS.2015.7116277","DOIUrl":null,"url":null,"abstract":"We illustrate that memory repair for high defect densities allows improving yield, extending circuit life, reducing power, and improving reliability, and can be used to push aggressively the limits of technology scaling. Then we present several developments enabling low-cost memory repair for high defect densities, which alllow realising this promise.","PeriodicalId":187545,"journal":{"name":"2015 IEEE 33rd VLSI Test Symposium (VTS)","volume":"47 23","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Memory repair for high defect densities\",\"authors\":\"M. Nicolaidis, P. Papavramidou\",\"doi\":\"10.1109/VTS.2015.7116277\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We illustrate that memory repair for high defect densities allows improving yield, extending circuit life, reducing power, and improving reliability, and can be used to push aggressively the limits of technology scaling. Then we present several developments enabling low-cost memory repair for high defect densities, which alllow realising this promise.\",\"PeriodicalId\":187545,\"journal\":{\"name\":\"2015 IEEE 33rd VLSI Test Symposium (VTS)\",\"volume\":\"47 23\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-04-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE 33rd VLSI Test Symposium (VTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VTS.2015.7116277\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 33rd VLSI Test Symposium (VTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VTS.2015.7116277","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

我们说明了高缺陷密度的存储器修复可以提高成品率，延长电路寿命，降低功耗，提高可靠性，并可用于积极推动技术扩展的限制。然后，我们提出了几个能够实现高缺陷密度低成本记忆修复的发展，这使得实现这一承诺成为可能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Memory repair for high defect densities

We illustrate that memory repair for high defect densities allows improving yield, extending circuit life, reducing power, and improving reliability, and can be used to push aggressively the limits of technology scaling. Then we present several developments enabling low-cost memory repair for high defect densities, which alllow realising this promise.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2015 IEEE 33rd VLSI Test Symposium (VTS)

自引率

0.00%

发文量