Wein-Town Sun, Cheng-Jye Liu, C. Lo, Y. Ting, Ying-Je Chen, Tai-Yi Wu, E. Toh, Xiao-Hong Yuan, Ko-Li Low, Qiu Han, Y. You, Y. Leung, S. Woo
{"title":"低成本嵌入式闪存技术","authors":"Wein-Town Sun, Cheng-Jye Liu, C. Lo, Y. Ting, Ying-Je Chen, Tai-Yi Wu, E. Toh, Xiao-Hong Yuan, Ko-Li Low, Qiu Han, Y. You, Y. Leung, S. Woo","doi":"10.1109/ICICDT.2011.5783211","DOIUrl":null,"url":null,"abstract":"A simple and low cost logic based single poly Flash memory technology, NeoFlash®, with fast programming and high reliability is demonstrated in this paper. Programming with channel hot-hole-induced hot-electron injection and erasure with uniform channel Fowler-Nordheim tunneling are utilized to achieve fast programming, high endurance and good reliability characteristics. Owing to its simple cell structure and operation schemes, only 3 additional non-critical masks are needed, and the complexity of process integration and device tuning is much reduced. The SONOS based technology has been successfully embedded into 0.35μm ∼ 65nm CMOS logic process. Because of electrons stored in nitride layer of ONO film, no tail bit during endurance and retention test is observed. As a result, NeoFlash® is a promising embedded Flash technology for SoC applications.","PeriodicalId":402000,"journal":{"name":"2011 IEEE International Conference on IC Design & Technology","volume":"147 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Low-cost embedded Flash memory technology\",\"authors\":\"Wein-Town Sun, Cheng-Jye Liu, C. Lo, Y. Ting, Ying-Je Chen, Tai-Yi Wu, E. Toh, Xiao-Hong Yuan, Ko-Li Low, Qiu Han, Y. You, Y. Leung, S. Woo\",\"doi\":\"10.1109/ICICDT.2011.5783211\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A simple and low cost logic based single poly Flash memory technology, NeoFlash®, with fast programming and high reliability is demonstrated in this paper. Programming with channel hot-hole-induced hot-electron injection and erasure with uniform channel Fowler-Nordheim tunneling are utilized to achieve fast programming, high endurance and good reliability characteristics. Owing to its simple cell structure and operation schemes, only 3 additional non-critical masks are needed, and the complexity of process integration and device tuning is much reduced. The SONOS based technology has been successfully embedded into 0.35μm ∼ 65nm CMOS logic process. Because of electrons stored in nitride layer of ONO film, no tail bit during endurance and retention test is observed. As a result, NeoFlash® is a promising embedded Flash technology for SoC applications.\",\"PeriodicalId\":402000,\"journal\":{\"name\":\"2011 IEEE International Conference on IC Design & Technology\",\"volume\":\"147 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-05-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE International Conference on IC Design & Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICICDT.2011.5783211\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE International Conference on IC Design & Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICDT.2011.5783211","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A simple and low cost logic based single poly Flash memory technology, NeoFlash®, with fast programming and high reliability is demonstrated in this paper. Programming with channel hot-hole-induced hot-electron injection and erasure with uniform channel Fowler-Nordheim tunneling are utilized to achieve fast programming, high endurance and good reliability characteristics. Owing to its simple cell structure and operation schemes, only 3 additional non-critical masks are needed, and the complexity of process integration and device tuning is much reduced. The SONOS based technology has been successfully embedded into 0.35μm ∼ 65nm CMOS logic process. Because of electrons stored in nitride layer of ONO film, no tail bit during endurance and retention test is observed. As a result, NeoFlash® is a promising embedded Flash technology for SoC applications.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
