从工艺参数波动预测MOS晶体管漏极电流色散的一种有效方法

Proceedings International Conference on Microelectronic Test Structures Pub Date : 1995-03-22 DOI:10.1109/ICMTS.1995.513974

M. Conti, S. Orcioni, C. Turchetti, P. Bellutti, M. Zen, N. Zorzi, G. Soncini

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引用次数: 0

摘要

本文提出了一个经验的MOSFET模型，该模型得到了测试结构测量数据的统计显著性支持。由于其准确性，该模型可以用于预测“先验”制造工艺对集成电路性能的公差，并进行组合的“工艺-电路”性能优化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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An efficient method to predict drain current dispersion in MOS transistors from technological parameters fluctuations

This paper proposes an empirical MOSFET model, supported by statistically significant data derived from measurements on test-structures. The model, due to its accuracy, can be useful in predicting "a priori" fabrication process tolerances on ICs performances and in carrying out a combined "process-circuit" performances optimization.

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Proceedings International Conference on Microelectronic Test Structures

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