A. Bertacchini, S. Scorcioni, D. Dondi, L. Larcher, P. Pavan, M. Todaro, A. Campa, G. Caretto, S. Petroni, A. Passaseo, M. de Vittorio
{"title":"用于振动能量采集的基于aln的MEMS器件","authors":"A. Bertacchini, S. Scorcioni, D. Dondi, L. Larcher, P. Pavan, M. Todaro, A. Campa, G. Caretto, S. Petroni, A. Passaseo, M. de Vittorio","doi":"10.1109/ESSDERC.2011.6044220","DOIUrl":null,"url":null,"abstract":"This paper presents a new AlN-based MEMS devices suitable for vibrational energy harvesting applications. Due to their particular shape and unlike traditional cantilever which efficiently harvest energy only if subjected to stimulus in the proper direction, the proposed devices have 3D generation capabilities solving the problem of device orientation and placement in real applications. Thanks to their particular shape, the realized devices present more than one fundamental resonance frequencies in a range comprised between 500 Hz and 1.5 kHz, with a voltage generation higher than 300μV and an output power up to 0.4 pW for single MEMS device.","PeriodicalId":161896,"journal":{"name":"2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","volume":"469 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":"{\"title\":\"AlN-based MEMS devices for vibrational energy harvesting applications\",\"authors\":\"A. Bertacchini, S. Scorcioni, D. Dondi, L. Larcher, P. Pavan, M. Todaro, A. Campa, G. Caretto, S. Petroni, A. Passaseo, M. de Vittorio\",\"doi\":\"10.1109/ESSDERC.2011.6044220\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a new AlN-based MEMS devices suitable for vibrational energy harvesting applications. Due to their particular shape and unlike traditional cantilever which efficiently harvest energy only if subjected to stimulus in the proper direction, the proposed devices have 3D generation capabilities solving the problem of device orientation and placement in real applications. Thanks to their particular shape, the realized devices present more than one fundamental resonance frequencies in a range comprised between 500 Hz and 1.5 kHz, with a voltage generation higher than 300μV and an output power up to 0.4 pW for single MEMS device.\",\"PeriodicalId\":161896,\"journal\":{\"name\":\"2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)\",\"volume\":\"469 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-10-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"20\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2011.6044220\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2011.6044220","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
AlN-based MEMS devices for vibrational energy harvesting applications
This paper presents a new AlN-based MEMS devices suitable for vibrational energy harvesting applications. Due to their particular shape and unlike traditional cantilever which efficiently harvest energy only if subjected to stimulus in the proper direction, the proposed devices have 3D generation capabilities solving the problem of device orientation and placement in real applications. Thanks to their particular shape, the realized devices present more than one fundamental resonance frequencies in a range comprised between 500 Hz and 1.5 kHz, with a voltage generation higher than 300μV and an output power up to 0.4 pW for single MEMS device.