Analysis of externally imposed mechanical stress effects on the hot-carrier-induced degradation of MOSFET's

We have studied the influence of externally imposed mechanical stress on the hot-carrier-induced degradation of MOSFET's. For nMOSFET's, tensile (compressive) stress increases (decreases) degradation. This effect can be ascribed to the piezoresistance effect which alters hot carrier generation. We have demonstrated that, in contradiction to earlier reports in the literature and for the considered mechanical stress values, externally imposed mechanical stress has no influence on carrier trapping, nor on interface trap creation.<>