铁电BEoL模块:在现有技术节点上增加非易失性存储器和变容管

2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI:10.1109/IITC/MAM57687.2023.10154868

K. Seidel, D. Lehninger, Sukhrob Abdulazhanov, A. Sünbül, R. Hoffmann, K. Zimmermann, N. Yadav, Q. H. Le, Matthias Landwehr, A. Heinig, H. Mähne, K. Bernert, S. Thiem, T. Kämpfe, M. Lederer

{"title":"铁电BEoL模块:在现有技术节点上增加非易失性存储器和变容管","authors":"K. Seidel, D. Lehninger, Sukhrob Abdulazhanov, A. Sünbül, R. Hoffmann, K. Zimmermann, N. Yadav, Q. H. Le, Matthias Landwehr, A. Heinig, H. Mähne, K. Bernert, S. Thiem, T. Kämpfe, M. Lederer","doi":"10.1109/IITC/MAM57687.2023.10154868","DOIUrl":null,"url":null,"abstract":"In this paper we show the potential of further device functionalization in interconnect layers on established technologies by implementing innovative ferroelectric films based on CMOS-compatible hafnium zirconium oxide (HZO). Thus, offering new opportunities for advanced system on chip solutions with reduced integration complexity and low technology cost adder. Based on the example of implemented ferroelectric capacitors in the BEoL of XFAB’s XT018 technology we demonstrate on the same wafer the versatility of such ferroelectric capacitors for the application as memory bitcell and varactor device.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"113 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Ferroelectric BEoL Module: Adding Non-Volatile Memories and Varactors to Existing Technology Nodes\",\"authors\":\"K. Seidel, D. Lehninger, Sukhrob Abdulazhanov, A. Sünbül, R. Hoffmann, K. Zimmermann, N. Yadav, Q. H. Le, Matthias Landwehr, A. Heinig, H. Mähne, K. Bernert, S. Thiem, T. Kämpfe, M. Lederer\",\"doi\":\"10.1109/IITC/MAM57687.2023.10154868\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we show the potential of further device functionalization in interconnect layers on established technologies by implementing innovative ferroelectric films based on CMOS-compatible hafnium zirconium oxide (HZO). Thus, offering new opportunities for advanced system on chip solutions with reduced integration complexity and low technology cost adder. Based on the example of implemented ferroelectric capacitors in the BEoL of XFAB’s XT018 technology we demonstrate on the same wafer the versatility of such ferroelectric capacitors for the application as memory bitcell and varactor device.\",\"PeriodicalId\":241835,\"journal\":{\"name\":\"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)\",\"volume\":\"113 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC/MAM57687.2023.10154868\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC/MAM57687.2023.10154868","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

在本文中，我们通过实现基于cmos兼容的氧化铪锆(HZO)的创新铁电薄膜，展示了在现有技术的互连层中进一步器件功能化的潜力。因此，为降低集成复杂性和低技术成本的先进系统芯片解决方案提供了新的机会。以XFAB的XT018技术的BEoL中实现的铁电电容器为例，在同一晶圆上演示了这种铁电电容器作为存储位单元和变容管器件的多功能性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A Ferroelectric BEoL Module: Adding Non-Volatile Memories and Varactors to Existing Technology Nodes

In this paper we show the potential of further device functionalization in interconnect layers on established technologies by implementing innovative ferroelectric films based on CMOS-compatible hafnium zirconium oxide (HZO). Thus, offering new opportunities for advanced system on chip solutions with reduced integration complexity and low technology cost adder. Based on the example of implemented ferroelectric capacitors in the BEoL of XFAB’s XT018 technology we demonstrate on the same wafer the versatility of such ferroelectric capacitors for the application as memory bitcell and varactor device.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)

自引率

0.00%

发文量