美国宇航局戈达德太空飞行中心的辐射效应测试结果纲要

2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC) Pub Date : 2020-11-01 DOI:10.1109/REDW51883.2020.9325841

Alyson D. Topper, J. Lauenstein, E. Wilcox, M. Berg, M. Campola, M. Casey, E. Wyrwas, M. O’Bryan, Thomas A. Carstens, Caroline M. Fedele, J. Forney, Hak S. Kim, Jason M. Osheroff, A. Phan, Max F. Chaiken, Donna J. Cochran, J. Pellish, Peter J. Majewicz

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引用次数: 3

摘要

进行了总电离剂量、位移损伤剂量和单事件效应测试，以表征和确定候选电子设备对NASA空间利用的适用性。测试的器件包括场效应管、闪存、fpga、光电器件、数字、模拟和双极器件。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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NASA Goddard Space Flight Center’s Compendium of Radiation Effects Test Results

Total ionizing dose, displacement damage dose, and single event effects testing were performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include FETs, flash memory, FPGAs, optoelectronics, digital, analog, and bipolar devices.

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来源期刊

2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC)

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