薄膜SOI基板上的CMOS/DMOS功率IC技术

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI:10.1109/SOI.1993.344543

G.M. Dolny, A. Ipri, M. Batty

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引用次数: 2

摘要

在薄膜SOI衬底上成功地集成了低压CMOS与高压电流、高压DMOS的功率IC技术。低压CMOS表现出良好的电气特性，功率DMOS可以提供超过3a的电流，能够承受120 v的>

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CMOS/DMOS power IC technology on thin-film SOI substrates

A power IC technology integrating low-voltage CMOS with high-voltage current, high-voltage DMOS on a thin-film SOI substrate has been successfully demonstrated. The low-voltage CMOS exhibit good electrical characteristics and the power DMOS can supply more than 3 A of current and is capable of withstanding 120 V.<>

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Proceedings of 1993 IEEE International SOI Conference

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