在200GHz SiGeC (Bipolar)和120GHz 0.18µm BiCMOS技术上实现微波频率下的10 Bit和12 Bit数据转换

M. Wingender, F. Bore, N. Chantier, A. Glascott-Jones, E. Bouin, J. Amblard
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引用次数: 1

摘要

本文介绍了双极和BiCMOS模拟电路的设计技术。对双极晶体管和CMOS晶体管的跨导、速度、匹配、噪声等性能进行了综述和比较。介绍了基于全双极200GHz SiGeC技术的单核12位1.5GS/s模数转换器(ADC)[1]和基于全双极200GHz SiGeC技术的单核12位3GS/s数模转换器(DAC)[2]等设计成果,以说明全双极高速数据转换器技术的优点和缺点。采用120 GHz 0.18um BiCMOS技术设计了一种基于4交错ADC核心的4位10位5GS/s ADC,以说明双极和CMOS技术相结合带来的优势。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
10 Bit and 12 Bit data conversion achievements at microwave frequencies on 200GHz SiGeC (Bipolar) and 120GHz 0.18µm BiCMOS technology
This paper describes design techniques for Bipolar and BiCMOS analog circuits. Comparison on such performances as transconductance, speed, matching, noise of bipolar and CMOS transistors are reviewed and compared. Design achievements such as a single core 12 Bit 1.5GS/s Analog to Digital Converter (ADC) [1] and a single core 12 Bit 3GS/s Digital to Analog Converters (DAC) [2] based on a fully bipolar 200GHz SiGeC technology are introduced to illustrate the advantages and drawbacks of a fully bipolar technology for high speed data converters. A Quad 10 Bit 5GS/s ADC based on 4 interleaved ADC Core designed with a 120 GHz 0.18um BiCMOS technology is also presented, to illustrate the advantages brought by the combination of Bipolar and CMOS technologies.
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