在受辐照的NPN BJTs中，由于氧化捕获电荷引起的发射极而产生的过量集电极电流

Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting Pub Date : 1994-10-10 DOI:10.1109/BIPOL.1994.587894

A. Wei, S. Kosier, peixiong zhao, W. Combs, M. DeLaus

{"title":"在受辐照的NPN BJTs中，由于氧化捕获电荷引起的发射极而产生的过量集电极电流","authors":"A. Wei, S. Kosier, peixiong zhao, W. Combs, M. DeLaus","doi":"10.1109/BIPOL.1994.587894","DOIUrl":null,"url":null,"abstract":"Excess collector current in irradiated NPN BJTs is linked to an oxide-trapped-charge-induced inversion layer acting as an additional emitter. Excess collector current is modeled by interpreting the inversion layer as an extension of the emitter.","PeriodicalId":373721,"journal":{"name":"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"Excess collector current due to an oxide-trapped-charge-induced emitter in irradiated NPN BJTs\",\"authors\":\"A. Wei, S. Kosier, peixiong zhao, W. Combs, M. DeLaus\",\"doi\":\"10.1109/BIPOL.1994.587894\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Excess collector current in irradiated NPN BJTs is linked to an oxide-trapped-charge-induced inversion layer acting as an additional emitter. Excess collector current is modeled by interpreting the inversion layer as an extension of the emitter.\",\"PeriodicalId\":373721,\"journal\":{\"name\":\"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-10-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.1994.587894\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1994.587894","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 13

摘要

在辐照的NPN bjt中，过量的集电极电流与氧化物捕获电荷诱导的反转层相关联，该反转层作为附加的发射极。通过将反转层解释为发射极的延伸来模拟多余的集电极电流。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Excess collector current due to an oxide-trapped-charge-induced emitter in irradiated NPN BJTs

Excess collector current in irradiated NPN BJTs is linked to an oxide-trapped-charge-induced inversion layer acting as an additional emitter. Excess collector current is modeled by interpreting the inversion layer as an extension of the emitter.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting

自引率

0.00%

发文量