A. Wei, S. Kosier, peixiong zhao, W. Combs, M. DeLaus
{"title":"在受辐照的NPN BJTs中,由于氧化捕获电荷引起的发射极而产生的过量集电极电流","authors":"A. Wei, S. Kosier, peixiong zhao, W. Combs, M. DeLaus","doi":"10.1109/BIPOL.1994.587894","DOIUrl":null,"url":null,"abstract":"Excess collector current in irradiated NPN BJTs is linked to an oxide-trapped-charge-induced inversion layer acting as an additional emitter. Excess collector current is modeled by interpreting the inversion layer as an extension of the emitter.","PeriodicalId":373721,"journal":{"name":"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"Excess collector current due to an oxide-trapped-charge-induced emitter in irradiated NPN BJTs\",\"authors\":\"A. Wei, S. Kosier, peixiong zhao, W. Combs, M. DeLaus\",\"doi\":\"10.1109/BIPOL.1994.587894\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Excess collector current in irradiated NPN BJTs is linked to an oxide-trapped-charge-induced inversion layer acting as an additional emitter. Excess collector current is modeled by interpreting the inversion layer as an extension of the emitter.\",\"PeriodicalId\":373721,\"journal\":{\"name\":\"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-10-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.1994.587894\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1994.587894","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Excess collector current due to an oxide-trapped-charge-induced emitter in irradiated NPN BJTs
Excess collector current in irradiated NPN BJTs is linked to an oxide-trapped-charge-induced inversion layer acting as an additional emitter. Excess collector current is modeled by interpreting the inversion layer as an extension of the emitter.