提高dc - mos - hemt性能的氧化物对比分析

2019 IEEE Conference on Modeling of Systems Circuits and Devices (MOS-AK India) Pub Date : 2019-02-01 DOI:10.1109/MOS-AK.2019.8902420

Praveen Pal, Yogesh Pratap, Mridula Gupta, S. Kabra

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引用次数: 1

摘要

AlGaN/GaN高电子迁移率晶体管(hemt)被认为是高功率和高速应用的良好候选者。本文模拟研究了不同栅极氧化物对双沟道DC-MOS-HEMTs(双沟道金属氧化物半导体HEMTs)的影响。研究了氧化层厚度对DC-MOS-HEMT性能的影响。分析了氧化层厚度变化对截止频率、最大频率、电流增益、功率增益和跨导的影响。HfO2具有良好的针尖关，高电流增益= 57.3 dB，高单边功率增益= 65.8 dB，最高跨导757 mS/mm。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Comparative analysis of oxides to improve performance of DC-MOS-HEMTs

AlGaN/GaN High Electron Mobility Transistors (HEMTs) are considered as good candidate for high power and high speed applications. In this paper, a simulation study has been done to investigate the effect of different gate oxides on double channel DC-MOS-HEMTs (Double Channel Metal Oxide Semiconductor HEMTs). The impact of oxide thickness on performance of DC-MOS-HEMT has also been performed. The impact of change in oxide thickness has been analyzed for cut off frequency, maximum frequency, current gain, power gain and transconductance. HfO2 shows good pinchoff, high current gain = 57.3 dB, high unilateral power gain = 65.8 dB and highest transconductance of 757 mS/mm.

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2019 IEEE Conference on Modeling of Systems Circuits and Devices (MOS-AK India)

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