D. Nguyen-ngoc, D. Harame, J. Malinowski, S. Jeng, K. Schonenberg, M. Gilbert, G. Berg, S. Wu, M. Soyuer, K. Tallman, K. Stein, R. Groves, S. Subbanna, D. Colavito, D. Sunderland, B. Meyerson
{"title":"用于混合信号应用的200mm SiGe-HBT BiCMOS技术","authors":"D. Nguyen-ngoc, D. Harame, J. Malinowski, S. Jeng, K. Schonenberg, M. Gilbert, G. Berg, S. Wu, M. Soyuer, K. Tallman, K. Stein, R. Groves, S. Subbanna, D. Colavito, D. Sunderland, B. Meyerson","doi":"10.1109/BIPOL.1995.493873","DOIUrl":null,"url":null,"abstract":"A BiCMOS technology including 0.25 /spl mu/m electrical channel length (L/sub EFF/) nFET and pFET CMOS devices and 60 GHz f/sub max/ SiGe-HBT transistors has been achieved on 200 mm wafers. Both CMOS circuits and SiGe-HBT analog circuits were fabricated on the same chip to demonstrate the high integration capabilities of the technology. The CMOS circuits include CMOS ring oscillators and a 64 k SRAM with a 34 /spl mu/m/sup 2/ cell size. The SiGe-HBT circuits include ECL ring oscillators and a Voltage Controlled Oscillator (VCO). This is the highest level of integration yet achieved for any SiGe-base bipolar technology.","PeriodicalId":230944,"journal":{"name":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","volume":"73 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"26","resultStr":"{\"title\":\"A 200 mm SiGe-HBT BiCMOS technology for mixed signal applications\",\"authors\":\"D. Nguyen-ngoc, D. Harame, J. Malinowski, S. Jeng, K. Schonenberg, M. Gilbert, G. Berg, S. Wu, M. Soyuer, K. Tallman, K. Stein, R. Groves, S. Subbanna, D. Colavito, D. Sunderland, B. Meyerson\",\"doi\":\"10.1109/BIPOL.1995.493873\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A BiCMOS technology including 0.25 /spl mu/m electrical channel length (L/sub EFF/) nFET and pFET CMOS devices and 60 GHz f/sub max/ SiGe-HBT transistors has been achieved on 200 mm wafers. Both CMOS circuits and SiGe-HBT analog circuits were fabricated on the same chip to demonstrate the high integration capabilities of the technology. The CMOS circuits include CMOS ring oscillators and a 64 k SRAM with a 34 /spl mu/m/sup 2/ cell size. The SiGe-HBT circuits include ECL ring oscillators and a Voltage Controlled Oscillator (VCO). This is the highest level of integration yet achieved for any SiGe-base bipolar technology.\",\"PeriodicalId\":230944,\"journal\":{\"name\":\"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting\",\"volume\":\"73 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"26\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.1995.493873\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1995.493873","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 200 mm SiGe-HBT BiCMOS technology for mixed signal applications
A BiCMOS technology including 0.25 /spl mu/m electrical channel length (L/sub EFF/) nFET and pFET CMOS devices and 60 GHz f/sub max/ SiGe-HBT transistors has been achieved on 200 mm wafers. Both CMOS circuits and SiGe-HBT analog circuits were fabricated on the same chip to demonstrate the high integration capabilities of the technology. The CMOS circuits include CMOS ring oscillators and a 64 k SRAM with a 34 /spl mu/m/sup 2/ cell size. The SiGe-HBT circuits include ECL ring oscillators and a Voltage Controlled Oscillator (VCO). This is the highest level of integration yet achieved for any SiGe-base bipolar technology.
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