Y. Miyamoto, T. Kanazawa, Y. Yonai, Atsushi Kato, M. Fujimatsu, M. Kashiwano, K. Ohsawa, K. Ohashi
{"title":"面向高速/低功耗应用的InGaAs MOSFET源结构","authors":"Y. Miyamoto, T. Kanazawa, Y. Yonai, Atsushi Kato, M. Fujimatsu, M. Kashiwano, K. Ohsawa, K. Ohashi","doi":"10.1109/ICIPRM.2014.6880570","DOIUrl":null,"url":null,"abstract":"High on-currents (Ion) and low off-currents (I<sub>off</sub>) under low supply voltage are important for logic applications. A heavily doped InP source was introduced to demonstrate the existence of high Ion in InGaAs MOSFETs, and I<sub>D</sub> = 2.4 mA/μm at V<sub>D</sub> = 0.5 V was observed. GaAsSb source was introduced in InGaAs tunnel FET to realize low I<sub>off</sub>. Narrow channel body was found to be essential for steep sub-threshold (SS) dependence, and a fabricated GaAsSb/InGaAs vertical tunnel FET with a 26 nm wide body showed steep SS. In addition, an InGaAs/InP super-lattice source was studied to consider the possibility of simultaneous high I<sub>on</sub> and low I<sub>off</sub> realization.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"90 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"InGaAs MOSFET source structures toward high speed/low power applications\",\"authors\":\"Y. Miyamoto, T. Kanazawa, Y. Yonai, Atsushi Kato, M. Fujimatsu, M. Kashiwano, K. Ohsawa, K. Ohashi\",\"doi\":\"10.1109/ICIPRM.2014.6880570\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High on-currents (Ion) and low off-currents (I<sub>off</sub>) under low supply voltage are important for logic applications. A heavily doped InP source was introduced to demonstrate the existence of high Ion in InGaAs MOSFETs, and I<sub>D</sub> = 2.4 mA/μm at V<sub>D</sub> = 0.5 V was observed. GaAsSb source was introduced in InGaAs tunnel FET to realize low I<sub>off</sub>. Narrow channel body was found to be essential for steep sub-threshold (SS) dependence, and a fabricated GaAsSb/InGaAs vertical tunnel FET with a 26 nm wide body showed steep SS. In addition, an InGaAs/InP super-lattice source was studied to consider the possibility of simultaneous high I<sub>on</sub> and low I<sub>off</sub> realization.\",\"PeriodicalId\":181494,\"journal\":{\"name\":\"26th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":\"90 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-05-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"26th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2014.6880570\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2014.6880570","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
InGaAs MOSFET source structures toward high speed/low power applications
High on-currents (Ion) and low off-currents (Ioff) under low supply voltage are important for logic applications. A heavily doped InP source was introduced to demonstrate the existence of high Ion in InGaAs MOSFETs, and ID = 2.4 mA/μm at VD = 0.5 V was observed. GaAsSb source was introduced in InGaAs tunnel FET to realize low Ioff. Narrow channel body was found to be essential for steep sub-threshold (SS) dependence, and a fabricated GaAsSb/InGaAs vertical tunnel FET with a 26 nm wide body showed steep SS. In addition, an InGaAs/InP super-lattice source was studied to consider the possibility of simultaneous high Ion and low Ioff realization.
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