无中间层的YIG薄膜在Si上的直接键合

26th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2014-05-11 DOI:10.1109/ICIPRM.2014.6880583

K. Pantzas, G. Patriarche, A. Talneau, J. Ben Youssef

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引用次数: 0

摘要

用扫描透射电子显微镜研究了钇铁石榴石在硅上的直接键合过程，并对其进行了表征。这种在磁光石榴石薄膜和硅导层之间没有层的混合堆的几何形状为高效的混合隔离器开辟了道路。

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Direct bonding of YIG film on Si without intermediate layer

Direct bonding of Yttrium Iron Garnet on Si without any intermediate layer is demonstrated and characterized using Scanning Transmission Electron Microscopy. Such geometry of the hybrid stack with no layer in between the magneto-optic garnet film and the Si guiding layer opens the route for highly efficient hybrid isolators.

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26th International Conference on Indium Phosphide and Related Materials (IPRM)

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