{"title":"约瑟夫森结MgO单晶衬底阶梯边缘表面形貌研究","authors":"Mamta Dahiya, S. Pal, N. Khare","doi":"10.1109/icee50728.2020.9776727","DOIUrl":null,"url":null,"abstract":"We have fabricated and compared the surface morphology of the step-edge on the MgO substrate by using Ar ion beam milling (IBM) and wet chemical etching methods. To characterize the surface morphology and step height of the fabricated step edge on MgO substrate, SEM and AFM measurements were performed. The step height obtained using IBM and chemical etching methods were ∼220 nm and ∼500 nm, respectively. From the comparison of AFM images of the un-etched and etched regions, a very small increase in the surface roughness of the etched region was observed for the IBM etched substrate; whereas for the chemical etched substrate the roughness of both un-etched and etched regions have increased. It was observed that the step-edge fabricated by IBM techniques has sharp step edge and better surface morphology as compared to step edge fabricated by chemical etching process.","PeriodicalId":436884,"journal":{"name":"2020 5th IEEE International Conference on Emerging Electronics (ICEE)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Surface Morphology of Step Edge on MgO Single Crystal Substrate for Josephson Junction\",\"authors\":\"Mamta Dahiya, S. Pal, N. Khare\",\"doi\":\"10.1109/icee50728.2020.9776727\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have fabricated and compared the surface morphology of the step-edge on the MgO substrate by using Ar ion beam milling (IBM) and wet chemical etching methods. To characterize the surface morphology and step height of the fabricated step edge on MgO substrate, SEM and AFM measurements were performed. The step height obtained using IBM and chemical etching methods were ∼220 nm and ∼500 nm, respectively. From the comparison of AFM images of the un-etched and etched regions, a very small increase in the surface roughness of the etched region was observed for the IBM etched substrate; whereas for the chemical etched substrate the roughness of both un-etched and etched regions have increased. It was observed that the step-edge fabricated by IBM techniques has sharp step edge and better surface morphology as compared to step edge fabricated by chemical etching process.\",\"PeriodicalId\":436884,\"journal\":{\"name\":\"2020 5th IEEE International Conference on Emerging Electronics (ICEE)\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-11-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 5th IEEE International Conference on Emerging Electronics (ICEE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/icee50728.2020.9776727\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 5th IEEE International Conference on Emerging Electronics (ICEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/icee50728.2020.9776727","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Surface Morphology of Step Edge on MgO Single Crystal Substrate for Josephson Junction
We have fabricated and compared the surface morphology of the step-edge on the MgO substrate by using Ar ion beam milling (IBM) and wet chemical etching methods. To characterize the surface morphology and step height of the fabricated step edge on MgO substrate, SEM and AFM measurements were performed. The step height obtained using IBM and chemical etching methods were ∼220 nm and ∼500 nm, respectively. From the comparison of AFM images of the un-etched and etched regions, a very small increase in the surface roughness of the etched region was observed for the IBM etched substrate; whereas for the chemical etched substrate the roughness of both un-etched and etched regions have increased. It was observed that the step-edge fabricated by IBM techniques has sharp step edge and better surface morphology as compared to step edge fabricated by chemical etching process.