约瑟夫森结MgO单晶衬底阶梯边缘表面形貌研究

Mamta Dahiya, S. Pal, N. Khare
{"title":"约瑟夫森结MgO单晶衬底阶梯边缘表面形貌研究","authors":"Mamta Dahiya, S. Pal, N. Khare","doi":"10.1109/icee50728.2020.9776727","DOIUrl":null,"url":null,"abstract":"We have fabricated and compared the surface morphology of the step-edge on the MgO substrate by using Ar ion beam milling (IBM) and wet chemical etching methods. To characterize the surface morphology and step height of the fabricated step edge on MgO substrate, SEM and AFM measurements were performed. The step height obtained using IBM and chemical etching methods were ∼220 nm and ∼500 nm, respectively. From the comparison of AFM images of the un-etched and etched regions, a very small increase in the surface roughness of the etched region was observed for the IBM etched substrate; whereas for the chemical etched substrate the roughness of both un-etched and etched regions have increased. It was observed that the step-edge fabricated by IBM techniques has sharp step edge and better surface morphology as compared to step edge fabricated by chemical etching process.","PeriodicalId":436884,"journal":{"name":"2020 5th IEEE International Conference on Emerging Electronics (ICEE)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Surface Morphology of Step Edge on MgO Single Crystal Substrate for Josephson Junction\",\"authors\":\"Mamta Dahiya, S. Pal, N. Khare\",\"doi\":\"10.1109/icee50728.2020.9776727\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have fabricated and compared the surface morphology of the step-edge on the MgO substrate by using Ar ion beam milling (IBM) and wet chemical etching methods. To characterize the surface morphology and step height of the fabricated step edge on MgO substrate, SEM and AFM measurements were performed. The step height obtained using IBM and chemical etching methods were ∼220 nm and ∼500 nm, respectively. From the comparison of AFM images of the un-etched and etched regions, a very small increase in the surface roughness of the etched region was observed for the IBM etched substrate; whereas for the chemical etched substrate the roughness of both un-etched and etched regions have increased. It was observed that the step-edge fabricated by IBM techniques has sharp step edge and better surface morphology as compared to step edge fabricated by chemical etching process.\",\"PeriodicalId\":436884,\"journal\":{\"name\":\"2020 5th IEEE International Conference on Emerging Electronics (ICEE)\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-11-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 5th IEEE International Conference on Emerging Electronics (ICEE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/icee50728.2020.9776727\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 5th IEEE International Conference on Emerging Electronics (ICEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/icee50728.2020.9776727","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

我们利用氩离子束铣削(IBM)和湿化学蚀刻方法在MgO衬底上制备并比较了台阶边缘的表面形貌。为了表征MgO衬底上制备的台阶边缘的表面形貌和台阶高度,进行了SEM和AFM测量。采用IBM和化学蚀刻方法获得的台阶高度分别为~ 220 nm和~ 500 nm。通过对未蚀刻区域和蚀刻区域的AFM图像的比较,可以观察到IBM蚀刻基板的蚀刻区域的表面粗糙度有很小的增加;而对于化学蚀刻基底,未蚀刻和蚀刻区域的粗糙度都增加了。结果表明,与化学刻蚀法制备的台阶边缘相比,采用IBM工艺制备的台阶边缘具有较好的台阶边缘和表面形貌。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Surface Morphology of Step Edge on MgO Single Crystal Substrate for Josephson Junction
We have fabricated and compared the surface morphology of the step-edge on the MgO substrate by using Ar ion beam milling (IBM) and wet chemical etching methods. To characterize the surface morphology and step height of the fabricated step edge on MgO substrate, SEM and AFM measurements were performed. The step height obtained using IBM and chemical etching methods were ∼220 nm and ∼500 nm, respectively. From the comparison of AFM images of the un-etched and etched regions, a very small increase in the surface roughness of the etched region was observed for the IBM etched substrate; whereas for the chemical etched substrate the roughness of both un-etched and etched regions have increased. It was observed that the step-edge fabricated by IBM techniques has sharp step edge and better surface morphology as compared to step edge fabricated by chemical etching process.
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