使用新型双源加热系统增强电流泄漏路径

H. Lin, J. Ma
{"title":"使用新型双源加热系统增强电流泄漏路径","authors":"H. Lin, J. Ma","doi":"10.1109/IRPS.2012.6241905","DOIUrl":null,"url":null,"abstract":"Thermal laser stimulation (TLS) implemented under testing has become an important failure analysis technique for System-on-Chip (SoCs). This technique ensures that devices under testing (DUT) can enter particular modes, which turn on certain circuit blocks when performing TLS. However, from foundry's perspective, TLS operated under testing may not be a cost-effective solution as numerous design and test resources are required. This paper proposes a novel dual source heating system which can localize defects without utilizing any vectors by using a thermal laser in combination with a heating plate connected to a temperature controller. In this study, a defective SoC was globally heated using the heating plate to enhance the leakage path by changing the properties of the chip. Meanwhile, active or passive devices inside the defective SoC were locally heated using the thermal laser to enhance the defect detection capability by changing the electrical behaviors of the active or passive devices. Using this technique, a silicon defect located in an embedded functional circuit block of the defective SoC was successfully isolated without pausing the sample at any certain vectors.","PeriodicalId":341663,"journal":{"name":"2012 IEEE International Reliability Physics Symposium (IRPS)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Enhancing a current leakage path using a novel dual source heating system\",\"authors\":\"H. Lin, J. Ma\",\"doi\":\"10.1109/IRPS.2012.6241905\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Thermal laser stimulation (TLS) implemented under testing has become an important failure analysis technique for System-on-Chip (SoCs). This technique ensures that devices under testing (DUT) can enter particular modes, which turn on certain circuit blocks when performing TLS. However, from foundry's perspective, TLS operated under testing may not be a cost-effective solution as numerous design and test resources are required. This paper proposes a novel dual source heating system which can localize defects without utilizing any vectors by using a thermal laser in combination with a heating plate connected to a temperature controller. In this study, a defective SoC was globally heated using the heating plate to enhance the leakage path by changing the properties of the chip. Meanwhile, active or passive devices inside the defective SoC were locally heated using the thermal laser to enhance the defect detection capability by changing the electrical behaviors of the active or passive devices. Using this technique, a silicon defect located in an embedded functional circuit block of the defective SoC was successfully isolated without pausing the sample at any certain vectors.\",\"PeriodicalId\":341663,\"journal\":{\"name\":\"2012 IEEE International Reliability Physics Symposium (IRPS)\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-04-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE International Reliability Physics Symposium (IRPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.2012.6241905\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2012.6241905","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

热激光刺激(TLS)已成为系统级芯片(soc)失效分析的重要技术。该技术确保被测设备(DUT)可以进入特定模式,在执行TLS时打开某些电路块。然而,从代工的角度来看,在测试下运行TLS可能不是一个经济有效的解决方案,因为需要大量的设计和测试资源。本文提出了一种新型的双源加热系统,该系统利用热激光与与温度控制器相连的加热板相结合,可以在不使用任何矢量的情况下对缺陷进行定位。在这项研究中,使用加热板对缺陷SoC进行全局加热,通过改变芯片的性质来增强泄漏路径。同时,利用热激光对缺陷SoC内部的有源或无源器件进行局部加热,通过改变有源或无源器件的电学行为来增强缺陷检测能力。使用该技术,位于有缺陷SoC的嵌入式功能电路块中的硅缺陷被成功隔离,而无需将样品暂停在任何特定向量上。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Enhancing a current leakage path using a novel dual source heating system
Thermal laser stimulation (TLS) implemented under testing has become an important failure analysis technique for System-on-Chip (SoCs). This technique ensures that devices under testing (DUT) can enter particular modes, which turn on certain circuit blocks when performing TLS. However, from foundry's perspective, TLS operated under testing may not be a cost-effective solution as numerous design and test resources are required. This paper proposes a novel dual source heating system which can localize defects without utilizing any vectors by using a thermal laser in combination with a heating plate connected to a temperature controller. In this study, a defective SoC was globally heated using the heating plate to enhance the leakage path by changing the properties of the chip. Meanwhile, active or passive devices inside the defective SoC were locally heated using the thermal laser to enhance the defect detection capability by changing the electrical behaviors of the active or passive devices. Using this technique, a silicon defect located in an embedded functional circuit block of the defective SoC was successfully isolated without pausing the sample at any certain vectors.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信