TiN氧化对通孔电阻影响的表征

Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488) Pub Date : 2003-09-04 DOI:10.1109/UGIM.2003.1225695

K. Gunturu, T. Haskett, T. Corsetti, M. Engle, J. Prasad

{"title":"TiN氧化对通孔电阻影响的表征","authors":"K. Gunturu, T. Haskett, T. Corsetti, M. Engle, J. Prasad","doi":"10.1109/UGIM.2003.1225695","DOIUrl":null,"url":null,"abstract":"A failure mechanism due to presence of an oxygen interface at the via bottom was identified. Our in depth experimental analysis indicate that this interface layer is formed due to oxidation of TiN layer during oxygen plasma exposure and the marginality of the RF sputter etch step that is performed prior to via barrier deposition. TEM and EDX analysis of high resistance vias confirmed the presence of an oxidation TiN layer at the bottom of the via.","PeriodicalId":356452,"journal":{"name":"Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Characterization of the effect of TiN oxidation on via resistance\",\"authors\":\"K. Gunturu, T. Haskett, T. Corsetti, M. Engle, J. Prasad\",\"doi\":\"10.1109/UGIM.2003.1225695\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A failure mechanism due to presence of an oxygen interface at the via bottom was identified. Our in depth experimental analysis indicate that this interface layer is formed due to oxidation of TiN layer during oxygen plasma exposure and the marginality of the RF sputter etch step that is performed prior to via barrier deposition. TEM and EDX analysis of high resistance vias confirmed the presence of an oxidation TiN layer at the bottom of the via.\",\"PeriodicalId\":356452,\"journal\":{\"name\":\"Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488)\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-09-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/UGIM.2003.1225695\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/UGIM.2003.1225695","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

确定了由于通孔底部存在氧界面而导致的失效机制。我们的深入实验分析表明，该界面层是由于氧等离子体暴露期间TiN层的氧化和在通过势垒沉积之前进行的RF溅射蚀刻步骤的边缘性而形成的。高阻通孔的TEM和EDX分析证实了在通孔底部存在氧化TiN层。

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Characterization of the effect of TiN oxidation on via resistance

A failure mechanism due to presence of an oxygen interface at the via bottom was identified. Our in depth experimental analysis indicate that this interface layer is formed due to oxidation of TiN layer during oxygen plasma exposure and the marginality of the RF sputter etch step that is performed prior to via barrier deposition. TEM and EDX analysis of high resistance vias confirmed the presence of an oxidation TiN layer at the bottom of the via.

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Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488)

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