{"title":"功率二极管SMBF封装热应力失效分析","authors":"Yuyu Peng, Wei Gao, Qiao Guo, Bo Zhang","doi":"10.1109/ICEPT50128.2020.9202545","DOIUrl":null,"url":null,"abstract":"With the development of power devices, the thermal reliability of power devices has become a research hot spot. The research object of this paper is the power diode of SMBF package. Through X-ray scanning and resin removal observation, it can be concluded that the excessive thermal stress of SMBF package may be the cause of its failure. Using ANSYS Workbench software simulation, the results show that the reduction of thermal expansion coefficient of resin can reduce the thermal stress. When the coefficient of thermal expansion is reduced from 11*10-6C-1 to 9*10-6C-1, the maximum shape variable of the device is reduced by 80.72%. When the thermal conductivity of the resin is reduced from 4.75W/(m*C) to 5.58W/(m*C), the junction temperature is reduced by 7.76%.","PeriodicalId":136777,"journal":{"name":"2020 21st International Conference on Electronic Packaging Technology (ICEPT)","volume":"239 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Thermal stress failure analysis of power diode SMBF package\",\"authors\":\"Yuyu Peng, Wei Gao, Qiao Guo, Bo Zhang\",\"doi\":\"10.1109/ICEPT50128.2020.9202545\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"With the development of power devices, the thermal reliability of power devices has become a research hot spot. The research object of this paper is the power diode of SMBF package. Through X-ray scanning and resin removal observation, it can be concluded that the excessive thermal stress of SMBF package may be the cause of its failure. Using ANSYS Workbench software simulation, the results show that the reduction of thermal expansion coefficient of resin can reduce the thermal stress. When the coefficient of thermal expansion is reduced from 11*10-6C-1 to 9*10-6C-1, the maximum shape variable of the device is reduced by 80.72%. When the thermal conductivity of the resin is reduced from 4.75W/(m*C) to 5.58W/(m*C), the junction temperature is reduced by 7.76%.\",\"PeriodicalId\":136777,\"journal\":{\"name\":\"2020 21st International Conference on Electronic Packaging Technology (ICEPT)\",\"volume\":\"239 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 21st International Conference on Electronic Packaging Technology (ICEPT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICEPT50128.2020.9202545\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 21st International Conference on Electronic Packaging Technology (ICEPT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEPT50128.2020.9202545","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Thermal stress failure analysis of power diode SMBF package
With the development of power devices, the thermal reliability of power devices has become a research hot spot. The research object of this paper is the power diode of SMBF package. Through X-ray scanning and resin removal observation, it can be concluded that the excessive thermal stress of SMBF package may be the cause of its failure. Using ANSYS Workbench software simulation, the results show that the reduction of thermal expansion coefficient of resin can reduce the thermal stress. When the coefficient of thermal expansion is reduced from 11*10-6C-1 to 9*10-6C-1, the maximum shape variable of the device is reduced by 80.72%. When the thermal conductivity of the resin is reduced from 4.75W/(m*C) to 5.58W/(m*C), the junction temperature is reduced by 7.76%.