面向高效可靠的300mm 3D技术,实现宽I/O互连

P. Coudrain, J. Colonna, C. Aumont, G. Garnier, P. Chausse, R. Segaud, K. Vial, A. Jouve, T. Mourier, T. Magis, P. Besson, L. Gabette, C. Brunet-Manquat, N. Allouti, C. Laviron, S. Chéramy, E. Saugier, J. Pruvost, A. Farcy, N. Hotellier
{"title":"面向高效可靠的300mm 3D技术,实现宽I/O互连","authors":"P. Coudrain, J. Colonna, C. Aumont, G. Garnier, P. Chausse, R. Segaud, K. Vial, A. Jouve, T. Mourier, T. Magis, P. Besson, L. Gabette, C. Brunet-Manquat, N. Allouti, C. Laviron, S. Chéramy, E. Saugier, J. Pruvost, A. Farcy, N. Hotellier","doi":"10.1109/EPTC.2012.6507102","DOIUrl":null,"url":null,"abstract":"This paper presents the prototype of a 3D circuit with Wide I/O interconnects in a 65nm CMOS node, assembled in a face-to-back integration and reported on a BGA. The process technology carried out for the realization of the bottom die will be presented in both 200mm and 300mm environment. Finally, the 3D assembly will be successfully assessed through electrical and reliability tests, concretising the realism of a 3D technology for future Wide I/O products.","PeriodicalId":431312,"journal":{"name":"2012 IEEE 14th Electronics Packaging Technology Conference (EPTC)","volume":"131 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"25","resultStr":"{\"title\":\"Towards efficient and reliable 300mm 3D technology for wide I/O interconnects\",\"authors\":\"P. Coudrain, J. Colonna, C. Aumont, G. Garnier, P. Chausse, R. Segaud, K. Vial, A. Jouve, T. Mourier, T. Magis, P. Besson, L. Gabette, C. Brunet-Manquat, N. Allouti, C. Laviron, S. Chéramy, E. Saugier, J. Pruvost, A. Farcy, N. Hotellier\",\"doi\":\"10.1109/EPTC.2012.6507102\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the prototype of a 3D circuit with Wide I/O interconnects in a 65nm CMOS node, assembled in a face-to-back integration and reported on a BGA. The process technology carried out for the realization of the bottom die will be presented in both 200mm and 300mm environment. Finally, the 3D assembly will be successfully assessed through electrical and reliability tests, concretising the realism of a 3D technology for future Wide I/O products.\",\"PeriodicalId\":431312,\"journal\":{\"name\":\"2012 IEEE 14th Electronics Packaging Technology Conference (EPTC)\",\"volume\":\"131 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"25\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE 14th Electronics Packaging Technology Conference (EPTC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EPTC.2012.6507102\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE 14th Electronics Packaging Technology Conference (EPTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EPTC.2012.6507102","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 25

摘要

本文介绍了在65nm CMOS节点上具有宽I/O互连的3D电路原型,采用对背集成方式组装,并在BGA上报道。将在200mm和300mm两种环境下介绍实现底模的工艺技术。最后,3D组件将通过电气和可靠性测试成功评估,为未来的宽I/O产品具体实现3D技术的现实性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Towards efficient and reliable 300mm 3D technology for wide I/O interconnects
This paper presents the prototype of a 3D circuit with Wide I/O interconnects in a 65nm CMOS node, assembled in a face-to-back integration and reported on a BGA. The process technology carried out for the realization of the bottom die will be presented in both 200mm and 300mm environment. Finally, the 3D assembly will be successfully assessed through electrical and reliability tests, concretising the realism of a 3D technology for future Wide I/O products.
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