SONOS闪存eeprom的漏极干扰机理

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. Pub Date : 2005-04-17 DOI:10.1109/RELPHY.2005.1493082

P.B. Kumar, R. Sharma, P. Nair, D. Nair, S. Kamohara, S. Mahapatra, J. Vasi

{"title":"SONOS闪存eeprom的漏极干扰机理","authors":"P.B. Kumar, R. Sharma, P. Nair, D. Nair, S. Kamohara, S. Mahapatra, J. Vasi","doi":"10.1109/RELPHY.2005.1493082","DOIUrl":null,"url":null,"abstract":"We investigate the mechanism of drain disturb in SONOS flash memory cells. Our results show that drain disturb can be a serious concern in a programmed state and is caused by injection of holes from the substrate into the nitride. We identify the key factors responsible for this to be band-to-band tunneling at the drain junction and impact ionization of the channel leakage current.","PeriodicalId":320150,"journal":{"name":"2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Mechanism of drain disturb in SONOS flash EEPROMs\",\"authors\":\"P.B. Kumar, R. Sharma, P. Nair, D. Nair, S. Kamohara, S. Mahapatra, J. Vasi\",\"doi\":\"10.1109/RELPHY.2005.1493082\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We investigate the mechanism of drain disturb in SONOS flash memory cells. Our results show that drain disturb can be a serious concern in a programmed state and is caused by injection of holes from the substrate into the nitride. We identify the key factors responsible for this to be band-to-band tunneling at the drain junction and impact ionization of the channel leakage current.\",\"PeriodicalId\":320150,\"journal\":{\"name\":\"2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-04-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RELPHY.2005.1493082\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.2005.1493082","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 6

摘要

我们研究了SONOS快闪记忆细胞的放电干扰机制。我们的研究结果表明，在编程状态下，漏极干扰可能是一个严重的问题，这是由衬底向氮化物中注入孔引起的。我们确定了造成这种情况的关键因素是漏极结的带对带隧道效应和通道泄漏电流的影响电离。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Mechanism of drain disturb in SONOS flash EEPROMs

We investigate the mechanism of drain disturb in SONOS flash memory cells. Our results show that drain disturb can be a serious concern in a programmed state and is caused by injection of holes from the substrate into the nitride. We identify the key factors responsible for this to be band-to-band tunneling at the drain junction and impact ionization of the channel leakage current.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.

自引率

0.00%

发文量